Analysis of solid phase crystallization in amorphized polycrystalline Si films on quartz substrates

Nakamura, Akira; Emoto, Fumiaki; Fujii, Eiji; Yamamoto, A.; Uemoto, Yasuhiro; Senda, K.; Kano, G.

doi:10.1063/1.343965

Cited by 57 publications

(21 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We confirmed the structure of SAH poly-Si to be similar to the conventional SPC of a-Si. The grain structure was a dendritic structure with twins extending along the principal axis of the grains [14,15]. The grain sizes were smaller than 100 nm.…”

Section: Resultsmentioning

confidence: 99%

New Crystallization Method of Amorphous Silicon by Selective Area Heating for Stamp Process

Kim

Jeong

Lee

et al. 2009

Molecular Crystals and Liquid Crystals

View full text Add to dashboard Cite

We propose a new crystallization technique called selective area heating. In this study, we investigated a new technique for high-reliability selective area crystallization of a-Si films that does not cause thermal damage to glass substrates. We reduced the crystallization time as compared to the conventional solid phase crystallization method using a stamp-type isolated thin heater. The thin heater was fabricated with a layer of Pt on a quartz substrate via Ta adhesion and capping layers. A crystalline transverse optic phonon peak at about 519 cm À1 was seen in Raman scattering spectra, showing that the films were crystallized. The poly-Si grain size was found to be smaller than 100 nm, and the dendritic structure was found using scanning electron microscopy.

show abstract

Section: Resultsmentioning

confidence: 99%

New Crystallization Method of Amorphous Silicon by Selective Area Heating for Stamp Process

Kim

Jeong

Lee

et al. 2009

Molecular Crystals and Liquid Crystals

View full text Add to dashboard Cite

show abstract

“…Then, the grain size increases due to secondary grain growth; the secondary growth rate increases with the grain boundary energy, surface energy anisotropy, grain boundary mobility, and T c (Thompson, 1985). Furthermore, twin formation at the early stage of crystallization preferentially accelerates the lateral growth rate in the <112> direction, producing grains with an ellipsoidal outline (Nakamura et al, 1989). Growth along the minor axis of the ellipsoid, i.e., in the <111> direction, proceeds with simultaneous formation of many micro-twins (Drosed & Washburn, 1980).…”

Section: Solid-phase Crystallizationmentioning

confidence: 99%

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Kitahara¹,

Hara²

2012

Crystallization - Science and Technology

View full text Add to dashboard Cite

“…Conventionally, there were many accesses for the crystallization of aSi film, such as solid phase crystallization (SPC) [1], excimer laser annealing (ELA) [2], and metal-induced crystallization (MIC) [3]. Among them, MIC effect is suitable to crystallize Si at lower temperature but at the expense of possible contamination and film disintegration.…”

Section: Introductionmentioning

confidence: 99%

Effect of microwave annealing on amorphous Si of carbon powder

Fong

Wang

Chin

2010

2010 3rd International Nanoelectronics Conference (INEC)

View full text Add to dashboard Cite

Crystalline silicon (c-Si) thin film is extremely important for low-cost, high performance Si-based devices, such as thin-film transistors and solar cells. We demonstrate that microwave irradiation onto amorphous silicon (a-Si) film on glass substrate with carbon overcoat is able to induce fast crystallization at a short annealing time, less than 300 s, 300 watt. X-ray diffraction and Raman spectroscopy were used to identify the evolution of crystallization. The reason of fast crystallization is attributed to, upon microwave irradiation, the microwave absorption of carbon overcoat to generate thermal energy, the dielectric properties of the heated a-Si, and facilitated nucleation of c-Si crystallites due to enhanced atomic vibration. The microwave crystallization of a-Si is extendable to produce c-Si on various substrates, such as plastics, on large area and remote bases. BACKGROUNDTo crystallize as-deposited amorphous Si film is by no means easy by simple post annealing, which usually needs high temperature and long soaking time, due to the very high active energy of crystallization. Conventionally, there were many accesses for the crystallization of aSi film, such as solid phase crystallization (SPC) [1], excimer laser annealing (ELA) [2], and metal-induced crystallization (MIC) [3]. Among them, MIC effect is suitable to crystallize Si at lower temperature but at the expense of possible contamination and film disintegration. Therefore, the exploration of an alternative way to crystallize a-Si thin film efficiently at a low temperature and short time to avoid any possible contamination and at a capacity of large film area is still an eager pursuit [4].

show abstract

Analysis of solid phase crystallization in amorphized polycrystalline Si films on quartz substrates

Cited by 57 publications

References 12 publications

New Crystallization Method of Amorphous Silicon by Selective Area Heating for Stamp Process

New Crystallization Method of Amorphous Silicon by Selective Area Heating for Stamp Process

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Effect of microwave annealing on amorphous Si of carbon powder

Contact Info

Product

Resources

About