Analysis of stress intensity factors and T-stress to control crack propagation for kerf-less spalling of single crystal silicon foils

Bouchard, Pierre‐Olivier; Bernacki, Marc; Parks, David M.

doi:10.1016/j.commatsci.2012.10.033

Cited by 18 publications

(5 citation statements)

References 21 publications

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“…Second, we removed the crack-induced damages on the fracture Si surface to minimize the surface recombination of photoexcited carriers and to improve the PEC HER properties. During crack propagation in the spalling process, the area near the crack tips suffers from a significant stress concentration. , This concentrated stress can inevitably induce the formation of defects, which are nano- and microcracks at the fracture surface. , These defects can act as recombination sites and deteriorate the PEC performance by reducing the minority carrier lifetime. To remove the fracture-induced defects, we etched the fracture surface of the 17 μm thick spalled Si using a KOH solution under optimum etching conditions, followed by electroless deposition of the Pt NPs.…”

Section: Resultsmentioning

confidence: 99%

“…During crack propagation in the spalling process, the area near the crack tips suffers from a significant stress concentration. 28,29 This concentrated stress can inevitably induce the formation of defects, which are nano-and microcracks at the fracture surface. 30,31 These defects can act as recombination sites and deteriorate the PEC performance by reducing the minority carrier lifetime.…”

Section: Resultsmentioning

confidence: 99%

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Wafer-Scale Ultrathin, Single-Crystal Si and GaAs Photocathodes for Photoelectrochemical Hydrogen Production

Lee

Kim

2018

ACS Appl. Mater. Interfaces

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Crystalline Si and III-V compound semiconductors with appropriate band edge positions for the reduction of water have been widely utilized in photoelectrochemical (PEC) cells for the hydrogen evolution reaction (HER). However, the high cost of manufacturing those PEC cell photoabsorbers makes it difficult to achieve cost-effective hydrogen production. To overcome this issue, a new approach to fabricate a photoabsorber with low cost yet high performance for the HER is highly necessary. Here, we present a controlled fracture method, the so-called spalling process, to fabricate a cost-effective thin semiconductor applicable to the PEC HER. Using this method, a wafer-scale thin Si, whose thickness can be controlled from a few micrometers to sub-50 μm, was fabricated from a thick Si mother substrate without material loss. Pt nanoparticle-decorated 16 μm thick spalled Si with an np rear junction exhibited an HER onset potential of 332 mV (vs reversible hydrogen electrode (RHE)) and a photocurrent density of 20.1 mA cm at 0 V (vs RHE), which are the best performances among previously reported planar-type thin Si-based photocathodes. Finally, we demonstrated that 20 μm thick GaAs could also be successfully fabricated by the spalling process, while exhibiting a PEC HER performance comparable to 350 μm thick bulk GaAs.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Wafer-Scale Ultrathin, Single-Crystal Si and GaAs Photocathodes for Photoelectrochemical Hydrogen Production

Lee

Kim

2018

ACS Appl. Mater. Interfaces

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“…The same variation was obtained in other investigations on various materials. Bouchard et al [41] have shown that T increases with increasing depth for a mono silicon. In [42], Sherry et al obtained an increase in T in absolute value with the variation of the crack size over the width of a plate.…”

Section: Discussionmentioning

confidence: 96%

An Extended Finite Element Method (XFEM) Study on the Elastic T-Stress Evaluations for a Notch in a Pipe Steel Exposed to Internal Pressure

et al. 2021

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The work investigates the importance of the K-T approach in the modelling of pressure cracked structures. T-stress is the constant in the second term of the Williams expression; it is often negligible, but recent literature has shown that there are cases where T-stress plays the role of opening the crack, also T-stress improves elastic modeling at the point of crack. In this research study, the most important effects of the T-stress are collected and analyzed. A numerical analysis was carried out by the extended finite element method (X-FEM) to analyze T-stress in an arc with external notch under internal pressure. The different stress method (SDM) is employed to calculate T-stress. Moreover, the influence of the geometry of the notch on the biaxiality is also examined. The biaxiality gave us a view on the initiation of the crack. The results are extended with a comparison to previous literature to validate the promising investigations.

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“…It is important to note that all parameters of the stressor layers mentioned above have also an impact on the direction of the fracture propagation in the silicon substrate, as reported by several publications [22,[29][30][31].…”

Section: Effect Of the Stressor Layer Materials On The Detachment Of ...mentioning

confidence: 87%

(111)Si thin layers detachment by stress-induced spallation

Zayyoun¹,

Pingault²,

Ntsoenzok³

et al. 2019

Surf. Topogr.: Metrol. Prop.

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In this work, results of controlled detachment of (111) silicon by stress induced spalling (SIS) process, which is based on a gluing on a metallic stressor layer by an epoxy adhesive on top of a silicon substrate, are presented. It is shown that silicon foils mainly (1 × 1) cm 2 with different thicknesses (~50-170 µm) can be successfully detached using different materials (steel, copper, aluminum, nickel and titanium) as stressor layers with thicknesses ~50-500 µm. Such detachment can be realized by dipping of a stressor/glue/silicon wafer based structure into liquid nitrogen. As a result, Si foils with different thicknesses from ~50 µm to ~170 µm can be detached. An analytical and numerical approaches based on principles of linear elastic fracture mechanics is developed and they are shown that such approaches can predict general trends and conditions for the detachment of silicon foils with desired thicknesses using a stressor layer. Raman spectroscopy analysis of the residual stresses in detached silicon foils shows, that tensile stresses (up to −36 MPa) as well as higher value compressive stresses (up to ~444 MPa) are present in such foils. Moreover, optical and scanning electron microscopy (SEM) measurements show that surface of the detached foils exhibits some periodic lines originated by stresses.

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Analysis of stress intensity factors and T-stress to control crack propagation for kerf-less spalling of single crystal silicon foils

Cited by 18 publications

References 21 publications

Wafer-Scale Ultrathin, Single-Crystal Si and GaAs Photocathodes for Photoelectrochemical Hydrogen Production

Wafer-Scale Ultrathin, Single-Crystal Si and GaAs Photocathodes for Photoelectrochemical Hydrogen Production

An Extended Finite Element Method (XFEM) Study on the Elastic T-Stress Evaluations for a Notch in a Pipe Steel Exposed to Internal Pressure

(111)Si thin layers detachment by stress-induced spallation

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