Analysis of structural defects in the CdSe x S1 – x nanocrystals

Petrosyan, P. G.; Grigoryan, L. N.

doi:10.1134/s1063784217030173

Cited by 7 publications

(4 citation statements)

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“…The depth of the maximum content of the alloying element in the surface layer of the crystal is mainly determined by the ion energy of the impurity element [17,18]. Одним із фундаментальних напрямів використання іонної імплантації металів є формування поверхневих сплавів будь-якого складу, а їх кількісна характеристика -розподіл атомів домішкового елемента в глибині поверхневого шару металевої підкладки [1][2][3][4][5]. При вивченні внеску кожного компонента в зміну електронної структури, емісійно-адсорбційних і каталітичних властивостей багатокомпонентних металевих сплавів, створення особливо чистих металевих твердих розчинів, а також визначення фактичної концентрації легуючих елементів і їх розподілу в поверхневому шарі кристалів, мають велике значення.…”

Section: Resultsunclassified

“…Under the conditions of our experiment for niobium: atomic mass А  41 g/mol, substance density   8.4 g/cm 3 , argon ion energy Е  1 keV, and irradiation of the target surface was produced close to normal. Under these conditions, the sputtering coefficient of the substance Y  1 [4]. By increasing the argon 04026-2 pressure in the chamber, one can significantly increase the current density of Ar + ions and reduce the etching time of each monolayer.…”

Section: Description Of Objects and Investigation Methodsmentioning

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Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Ergashov¹,

Donaev²

2022

J. Nano- Electron. Phys.

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One of the fundamental directions in the use of ion implantation of metals is the creation of surface alloys of any composition. And their quantitative characteristic is the distribution of atoms of the impurity element in depth of the surface layer of the metal substrate [1][2][3][4][5]. In the study of the contribution of each component in changing the electronic structure, emission-adsorption and catalytic properties of multicomponent metal alloys, the creation of particularly pure metal solid solutions, as well as the determination of the actual concentration of alloying elements and their distribution in the surface layer of crystals are of great value. To study the distribution profiles of the concentration of ion-implanted atoms of refractory metals in alloys based on refractory metals, the method of layer-by-layer analysis using Auger electron spectroscopy in conjunction with an argon ion cannon is used. In this work, on the example of implantation of low-energy molybdenum ions into a single crystal of niobium facet (100), the features of creating surface alloys based on refractory metals with a low concentration of the alloying element and the distribution of the ion-implanted metal in the near-surface region of the crystal are studied [5][6][7][8][9].

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Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Ergashov¹,

Donaev²

2022

J. Nano- Electron. Phys.

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“…залежність α = f (hν) має експоненціальний характер -«хвіст Урбаха», що характерно для аморфних твердих тіл[12]. Це пояснюється наявністю невпорядкованості на атомному рівні в досліджуваних структурах[13].На рис. 6 представлено частотну залежність коефіцієнта поглинання світла від енергії падаючих квантів α (hν) для склозразків системи Ag 2 S-GeS 2 -As 2 S 3 (склади зразків в табл.…”

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PROPERTIES OF GLASSES IN THE Ag2S–GeS2–As(Sb)2S3 SYSTEMS

БЕРЕЗНЮК¹,

Petrus²,

Zamuruyeva³

et al. 2023

Наук. вісник Ужг

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The characteristic temperatures for individual glass samples of quasi-ternary systems Ag2S–GeS2–As(Sb)2S3 were determined by differential thermal analysis method. Obtained data show that the glass transition temperature of the alloys is in the range typical of chalcogenide glasses. It was established that the glass transition temperature increases with the modifier content in the range of 402-421 K and 373-438 K for the Ag2S–GeS2–As(Sb)2S3 systems, respectively. For the constant Ag2S concentration, the value of the glass transition and crystallization temperatures increases with the content of germanium (IV) sulfide. The reduced glass transition temperature Tgr was calculated from obtained results which lies in the range of 0.62-0.73 and 0.59-0.70 for the glasses of the Ag2S–GeS2–As(Sb)2S3 systems, respectively, which indicates the high capacity of the samples to glass formation. Optical absorption spectra were measured at 297 K. The band gap energy Eg of the glasses of the Ag2S–GeS2–As(Sb)2S3 systems was estimated from the data on the spectral distribution of the absorption coefficient in the region of the absorption edge. It was determined that the absorption edge shifts to longer wavelengths with the increase of the GeS2 content in glasses, while the energy position of the absorption edge increases. Ade crease in the band gap energy is observed for all glass samples when a modifier is introduced into the glass-forming matrix. The characteristic energy of the degree of tailing of the absorption edge is in the range from 0.066 to 0.079 eV for all studied glass samples. Keywords: сhalcogenide glasses; quasi-ternary systems; glass-formation; characteristic temperatures; band gap energy.

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