Analysis of Subthreshold Characteristics for Top and Bottom Flat-band Voltages of Junction less Double Gate MOSFET

Jung, Hyun–Kyo

doi:10.14445/22315381/ijett-v69i3p201

Cited by 2 publications

(1 citation statement)

References 14 publications

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“…Many researchers have used a constant channel doping distribution to analyze the JLDG MOSFET [16][17][18][19][20]. However, it is impossible to maintain a constant doping distribution in the channel in the ion-implantation or diffusion process used for doping impurities in the actual MOSFET manufacturing [21].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Subthreshold Swing of Symmetric Junctionless Double Gate MOSFET Using Gaussian Doping Profile

Jung¹

2022

IJETAE

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—The variation of subthreshold swing(SS) according to the projected range (Rp ) and standard projected deviation (σp ) was analyzed when the symmetrical junctionless double gate (JLDG) MOSFET was doped with Gaussian doping profile. For this purpose, the analytical SS model was presented. We compared with the TCAD results to turn out the validity of this model, and the SSs of this model agreed with those of TCAD. The effective conduction path and mean doping concentration affecting the SS were analyzed according to the Rp and σp . As a result, the SS increased as the Rp and σp increased simultaneously. The smaller the Rp and the larger the σp , the lower the SS. When Rp = 1.5 nm, it showed the SS below 100mV/dec without being affected by the change of σp or silicon thickness. When σp = 3nm, it was also 100mV/dec or less regardless of the change of Rp and silicon thickness. Keywords— Double gate, Junctionless, Subthreshold swing, Gaussian, Projected range, Standard projected deviation

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