Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates

Łukasiak, L.; Roman, P.; Jakubowski, Andrzej; Rużyłło, Jerzy

doi:10.1016/s0038-1101(00)00224-0

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…Also the Surface Photovoltage (SPV) technique -which is typically operated at low injection level -has been applied to SOI material [17], whereby recent methods use contactless voltage measurements, based on a Kelvin probe [18]. The limitations of SPV for the characterization of ultra-thin (50 nm) SOI wafers have been pointed out by Lukasiak et al [19]. Another recent development is based on Photoluminescence (PL) measurements, either at low [20,21] or at room temperature [22,23], enabling a contact-less assessment of the carrier lifetime, including wafer mapping.…”

Section: Lifetime and Defect Analysis In Soimentioning

confidence: 99%

Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices

Simoen

Claeys

Gaubas

et al. 2005

SSP

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An overview is given of analytical techniques for the characterization of the electrical and transport parameters in thin (<1 µm) semiconductor layers. Some of these methods have been applied to the lifetime and diffusion length study in thin strain-relaxed buffer (SRB) layers of strained silicon (SSi) substrates, while a second group was dedicated to Silicon-on-Insulator (SOI) materials and devices. The employed techniques can be divided into two groups, whether a device structure (junction, MOS capacitor, MOSFET) is required or not. However, the MicroWave Absorption (MWA) technique can be used in both cases, making it a versatile tool to study both grown-in and processing-induced electrically active defects. The transport properties of SSi wafers are strongly determined by the density of threading and misfit dislocations, although the dependence of the recombination lifetime is weaker than expected from simple Shockley-Read-Hall (SRH) theory. This is related to the high injection regime typically employed, enabling the characterization of the 250-350 nm thick Si1-xGex layer only. At longer carrier decay times, multiple trapping events dominate that can be described by a stretched exponent approach, typical of disordered materials. For SOI substrates, transistor-based techniques will be demonstrated that enable to assess the generation or recombination lifetime in the thin silicon film (<100 nm). The lifetime can be severely degraded by irradiation or hot-carrier degradation. Finally, it will be shown that Generation-Recombination (GR) noise spectroscopy as a function of temperature allows identifying residual ion-implantation-damage related deep levels, which are otherwise hard to detect even by Deep Level Transient Spectroscopy (DLTS).

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Section: Lifetime and Defect Analysis In Soimentioning

confidence: 99%

Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices

Simoen

Claeys

Gaubas

et al. 2005

SSP

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show abstract

“…The small signal ac surface photo voltage (SPV) technique traditionally used for bulk silicon and epi wafers [1] can be applied, as well, to film characterization [2]. However, until now the use of SPV-based methods was limited to thick films/SOI only [3]. The criteria for this condition can be stated as follows: the film thickness has to be greater than the sum of the two depletion layers associated with the surface and the front BOX interface.…”

Section: Introductionmentioning

confidence: 99%