Analysis of Surface Contamination from Chemical Cleaning and Ion Implantation

Slusser, George J.

doi:10.1007/978-3-642-82724-2_87

Springer Series in Chemical Physics

1986

DOI: 10.1007/978-3-642-82724-2_87

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Analysis of Surface Contamination from Chemical Cleaning and Ion Implantation

George J. Slusser

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1987

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The Redistribution of Impurities Under RTP for Polysilicon Capped Silicon

Hockett

1987

MRS Proc.

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Rapid Thermal Processing is being evaluated in the IC industry as a way to meet the thermal budget requirements of reduced scaling in high performance Si IC's.As scaling is reduced and alternative processing is used, the study of low level interfacial impurities is expected to become more important.An example is presented here for the redistribution of interfacial impurities under RTP for polysilicon capped silicon similar to that proposed for shallow junction bipolar transistors.

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The Redistribution of Impurities Under RTP for Polysilicon Capped Silicon

Hockett

1987

MRS Proc.

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Analysis of Surface Contamination from Chemical Cleaning and Ion Implantation

Cited by 1 publication

References 3 publications

The Redistribution of Impurities Under RTP for Polysilicon Capped Silicon

The Redistribution of Impurities Under RTP for Polysilicon Capped Silicon

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