Analysis of surface morphology at leakage current sources on large-area GaN-based p-i-n diodes

Abstract

This paper investigated the relationship between the leakage current of 8 GaN-based diodes with the large size of 8×8 2 under reverse bias and their responsivity, and it was found that reducing leakage current is an important way to improve the conversion effective of diodes. Leakage analysis was performed separately for two sizes of diodes. The location of the leakage was found by emission microscope, and the morphology of the leakage point was analyzed using a focus ion beam and a scanning electron microscope. It was found that structural defects, which may be caused by drops of impurities during material growth, can form large leakage channels.