Analysis of temperature dependence of Hall mobility of nondoped and nitrogen-doped β-SiC single crystals grown by chemical vapor deposition

Abstract

Temperature dependencies of Hall mobility of nondoped and nitrogen-doped n-type β-SiC films have been analyzed using a conventional theoretical model. Considering acoustic, polar optical, and piezoelectric lattice scatterings, as well as ionized and neutral impurity scatterings, theoretical calculations well fitted to the experimental results are obtained at 70–1000 K. Contributions of acoustic, polar optical, and piezoelectric scatterings to the whole lattice scattering are 84%, 14%, and 2% at 300 K, respectively. Impurity compensation ratio NA/ND of nondoped films increases from 0.45 to 0.96 with increasing Si/C ratio in the source gases. Nitrogen-doped films show constant compensation ratios of 0.25–0.30 with various doping amounts. These values are different from the previous results obtained by the analysis of temperature dependencies of carrier concentration.

Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(100) by modeling and simulation

“…The large lattice mismatch and high deposition temperature required for the growth of SiC films are primarily responsible for the fundamental material related problems including the residual strain, thermal expansion coefficient, low energy defect formation etc. The epitaxially grown films are usually n-type with high donor concentrations [9][10][11]. Recent studies by scanning electron microscopy (SEM) have revealed high density of lattice defects such as stacking faults and anti-phase boundaries [12,13].…”

Temperature dependence of the Hall mobility of n-type 3C-SiC

“…In our numerical calculations, four modes of lattice scattering due to acoustic, piezoelectric scattering, polar optical and intervalley optical scattering, and two modes of impurity scattering due to ionized impurity and neutral impurity scattering are considered. To compare our results with the experimental data [6], we study three n-type 3C-SiC samples:…”

“…(1) N D = 0.48 × 10 18 cm −3 , N A = 0.12 × 10 18 cm −3 , and The other parameters used in the calculation for Hall mobility are taken as the same as in reference [6].…”

“…Suzuki et al [5] measured the Hall mobility in three n-type 3C-SiC samples at temperatures ranging from 70 K to 1000 K. They found that the mobility varied as µ H ∼ T −2.0 to −2.2 above room temperature. A conventional theoretical model was used by Suzuki et al [6] to fit the temperature dependencies of the Hall mobility by considering the acoustic, polar optical, and piezoelectric lattice scatterings, as well as the ionized and neutral impurity scatterings. The calculated Hall mobility agreed with the experimental data for lightly doped samples, but was much larger than the experimental data at low temperature for heavily doped samples.…”

Effects of Anisotropy on the Electron Transport of 4H-SiC

“…A partially compensated n-type material with N A = 10 16 cm À3 and N D = 6 Â 10 16 cm À3 is assumed for the calculation in order to compare our results with the Monte Carlo simulations. The impurity concentration is taken as n i = N + 2N A [12], where N is electron concentration and N A is the acceptor concentration. Most of the other material parameters and scattering parameters are taken from Ref.…”