Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

Abstract

Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metalinsulator-semiconductor Schottky diodes Fabrication and properties of metal/ferroelectrics/semiconductor diodes on 4H-SiC Appl.In order to determine the effective current-conduction mechanisms in Au/TiO 2 /n-4H-SiC (metalinsulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the temperature range of 200-380 K. Some electrical parameters, such as ideality factor (n), zero-bias barrier height (BH) (U Bo ), series and shunt resistances (R s , R sh ), were obtained as 5.09, 0.81 eV, 37.43 X, and 435 kX at 200 K and 2.68, 0.95 eV, 5.99 X, and 73 kX at 380 K, respectively. The energy density distribution profile of surface states (N ss ) was extracted from the forward-bias I-V data by taking into account voltage dependent of the ideality factor (n V ), effective BH (U e ), and R s for 200, 300, and 380 K. The Ln(I) vs V plots are completely parallel in the intermediate bias voltages, which may be well explained by field emission (FE) mechanism for each temperature. On the other hand, the high value of n cannot be explained with this mechanism. Therefore, to explain the change in BH and n with temperature, U Bo vs q/2kT plot was drawn to obtain an evidence of a Gaussian distribution (GD) of the BHs and thus the mean value of BH ( U Bo ) and standard deviation (r so ) values were found from this plot as 1.396 eV and 0.176 V, respectively. The U Bo and Richardson constant (A*) values were found as 1.393 eV and 145.5 A.cm À2 K À2 using modified Ln(I o /T 2 )-(q 2 r s 2 /2k 2 T 2 ) vs q/kT plot, respectively. It is clear that all of the obtained main electrical parameters were found as a strong function of temperature. These results indicated that the current conduction mechanism in Au/TiO 2 /n-4 H-SiC (SBD) well obey the FE and GD mechanism rather than other mechanisms. V C 2014 AIP Publishing LLC.

The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs)

“…The origin of R s can arise from five different sources: (1) the rectifier contact made by the probe wire and ohmic back contact to the semiconductor; (2) an interfacial layer native or deposited between metal and semiconductor; (3) the resistance of the quasi-neutral bulk semiconductor between the back/rectifier contact to the semiconductor and the depletion layer edge at the semiconductor surface underneath the gate; (4) an extremely non uniform doping distribution of donor or acceptor atoms in the semiconductor underneath the gate; (5) the particular density distribution of N ss between Metal and Semiconductor [12,14]. When the forward bias is applied on the diode, while the most of this voltage drops in the depletion layer, remaining voltage is shared by the semiconductor bulk, R s , the interfacial dipole and interfacial layer (native or deposited).…”

Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range

“…For MS-or MIS-type SBDs, according to the TE theory, the relation between I and V (V ≥ 3kT/q) can be expressed as [1][2][3][24][25][26][27][28][29][30][31]:…”

“…Although there are many studies both theoretical and experimental on these devices, their conduction mechanisms and the formation of barrier height (BH) at MIS interface have not been clarified yet [1][2][3][4][5][6][7][8][9]. At any specific, especially low-temperature and -voltage, interval several conduction mechanisms can be individually dominating or collectively operative.…”

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3Interfacial Layer at Room Temperature

“…In general, polarization mechanisms at low frequencies are affected by electronic, ionic, dipolar and interface or surface polarization distribution [24,25]. The high values of ε and ε investigated at low frequencies may be attributed to interfacial Maxwell-Wagner polarization [26] and space charge polarization [27].…”

“…The complex impedance Z * or the complex permittivity ε * = 1/M * data are transformed into the M * formalism using the following relation [11,[26][27][28].…”