Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

Sachenko, A. V.; Shkrebtii, A.; Korkishko, R.M.; Kostylyov, V. P.; Kulish, M.R.; Sokolovskyi, I.O.; Evstigneev, Mykhaylo

doi:10.1088/0022-3727/48/45/455101

Cited by 6 publications

(4 citation statements)

References 23 publications

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“…(4)(5), where η is overall efficiency, P out is the power output of the betavoltaic device, P in is the power of the electron beam, I m and V m are the current and voltage at the point of maximum power, I beam and V beam are the current and voltage of the incident electron beam, and V oc is the open circuit voltage of the betavoltaic device. 20,21 η = P out P in…”

Section: Resultsmentioning

confidence: 99%

Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch

Heuser

Braun

McIntyre

et al. 2021

Journal of Applied Physics

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A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a triple mesa etch technique was used to fabricate efficient betavoltaic energy converters. Monte Carlo simulation platform CASINO was used to model beta radiation penetration into GaN to aid device design. The resulting devices were tested under irradiation from a scanning electron microscope (SEM) electron beam (e-beam) tuned to imitate the energies of the 63 Ni beta emission spectrum. Based on current-voltage (I-V) measurements taken under e-beam illumination, a maximum open-circuit voltage of 412 mV and a maximum short-circuit current density of 407 nA/cm 2 were measured. A high fill factor (FF) of 0.77 and power conversion efficiency of 6.6% were obtained. Additionally, the proposed triple mesa etch technique used to create these betavoltaics has potential for further use in fabricating many types of electronic devices using a wide variety of material platforms.

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Section: Resultsmentioning

confidence: 99%

Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch

Heuser

Braun

McIntyre

et al. 2021

Journal of Applied Physics

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“…A general algorithm was proposed to optimize the design of solar cells to various operational conditions: on land and in space, for focused or scattered light. Various constructions for mono-and heterojunctions were also proposed [8][9][10][11][12][13][14][15].…”

Section: New Surface Effects In Quantum-size Superlattices (Research mentioning

confidence: 99%

“…The physical mechanisms were analyzed, and the theory of modern SCs fabricated on the basis of heterostructures with amorphous silicon (a-Si:H/c-Si) was developed [12,13]. A good agreement of theoretical results with experimental data at temperatures above 200 K was obtained.…”

Section: New Surface Effects In Quantum-size Superlattices (Research mentioning

confidence: 99%

On Some Important Results in Semiconductor Surface Science Obtained in Ukraine during the Independence Years (1991-2016)

Литовченко

2017

Ukr. J. Phys.

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“…Here, A S C is the surface area of the solar cell. The space-charge region recombination rate is given by [11]…”

Section: Theoretical Formulationmentioning

confidence: 99%

Photoconversion in the HIT solar cells: Theory vs experiment

Sachenko,

Kryuchenko,

Kostylyov

et al. 2015

Preprint

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Theoretical expressions for the photocurrent in Heterojunction solar cells with Intrinsic Thin layer (HIT cells) are derived taking into account tunneling of electrons and holes through wide-bandgap layers of α-Si:H or α-SiC:H. The criteria, under which tunneling does not lead to the deterioration of solar cell characteristics, in particular, to the reduction of the short-circuit current and open-circuit voltage, are introduced. An algorithm to compute the photoconversion efficiency of HIT elements taking into account the peculiarities of the open-circuit voltage generation, in particular, its rather high values, is proposed. To test the theoretical predictions against the experimental results, HIT elements with the efficiency of about 20 % are manufactured, and their short-circuit current, open-circuit voltage, photoconversion power, and fill factor of the current-voltage curve are measured as a function of temperature in a wide temperature range from 80 to 420 K. At low temperatures, the open-circuit voltage and the photoconversion power decrease as temperature is reduced. At T ≥ 200 K, the theoretical expressions and the experimental curves agree rather well. The behavior of the fill factor and output power at low temperatures is explained by the increase of the series resistance on cooling. The reasons behind the reduction of the power temperature coefficient in HIT elements are discussed and shown to be related to the low surface and volume recombination rates. Finally, a theoretical expression for the HIT element's temperature under natural working conditions is derived.

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Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

Cited by 6 publications

References 23 publications

Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch

Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch

On Some Important Results in Semiconductor Surface Science Obtained in Ukraine during the Independence Years (1991-2016)

Photoconversion in the HIT solar cells: Theory vs experiment

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