Analysis of the band offsets between ultrathin GaN(000) layers and sapphire (0001) by photoelectron spectroscopy

Hamsen, Christoph; Lorenz, Pierre; Schaefer, J.A.; Krischok, S.

doi:10.1002/pssc.200982443

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…The Ga‐face GaN samples were directly grown on 6H‐SiC and the N‐face on α‐Al 2 O 3 . The GaN was grown under Ga‐stable conditions using a nitrogen plasma source adjustment of p N = 7 × 10 −5 mbar and P = 450 W. An optimized substrate temperature of 730 and 750 °C for SiC and Al 2 O 3 was found, respectively 8, 14. The growth was in situ controlled by reflection high energy electron diffraction (RHEED).…”

Section: Experimental Setup and Sample Preparationmentioning

confidence: 99%

Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy

Lorenz

Haensel

Gutt

et al. 2010

phys. stat. sol. (b)

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The properties of Ga-face and N-face GaN surfaces were studied by X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS), atomic force microscopy (AFM), reflection high energy electron diffraction (RHEED) as well as high resolution electron energy loss spectroscopy (HREELS). The Ga-face GaN was grown on 6H-SiC(0001) and the N-face GaN directly on alpha-Al2O3(0001) by plasma assisted molecular beam epitaxy (PAMBE) and in situ analysed by photoelectron spectroscopy. The Ga-face GaN surfaces show a 2 x 2 reconstruction measured by RHEED. From the analysis of the XPS spectra a valence band maximum located 2.9 eV below the Fermi level results. Furthermore, the UPS spectra exhibit two surface states. The N-face GaN presented a 1 x 1 surface with one surface state and a valence band maximum located 2.4 eV below E-F. These values correspond to an upward band bending of about 0.9 eV for the N-face GaN(000 (1) over bar)-1 x 1 and about 0.4 eV for the GaN(0001)-2 x 2 (Ga-face) results. The different surface band bending is further supported by the evaluation of the FWHM of the quasi-elastically reflected electrons in HREELS

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Section: Experimental Setup and Sample Preparationmentioning

confidence: 99%

Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy

Lorenz

Haensel

Gutt

et al. 2010

phys. stat. sol. (b)

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Band Bending at Metal-Semiconductor Interfaces, Ferroelectric Surfaces and Metal-Ferroelectric Interfaces Investigated by Photoelectron Spectroscopy

Apostol

Teodorescu

2015

Surface Science Tools for Nanomaterials Characterization

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Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

Pérez‐Tomás

Fontserè

Llobet

et al. 2013

Journal of Applied Physics

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The vertical bulk (drain-bulk) current (Idb) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental Idb (25–300 °C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (Ea), the (soft or destructive) vertical breakdown voltage (VB), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (Ea = 0.35 eV at T = 25–300 °C; VB = 840 V), GaN-on-sapphire follows the trap assisted mechanism (Ea = 2.5 eV at T > 265 °C; VB > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (Ea = 0.35 eV at T > 150 °C; VB = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

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Analysis of the band offsets between ultrathin GaN(000) layers and sapphire (0001) by photoelectron spectroscopy

Cited by 4 publications

References 15 publications

Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy

Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy

Band Bending at Metal-Semiconductor Interfaces, Ferroelectric Surfaces and Metal-Ferroelectric Interfaces Investigated by Photoelectron Spectroscopy

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

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