1993
DOI: 10.1016/0169-4332(93)90045-d
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Analysis of the depth profile of Fe-Si buried layers in Fe+-implanted Si wafer by soft X-ray emission spectroscopy

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Cited by 14 publications
(5 citation statements)
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“…The use of electron impact excitation for the Si L 2,3 XES at different accelerating voltages in the x-ray tube allows us to probe different layers of the target because of the pronounced dependence of the electron range and therefore of the depth of origin of the x-rays as a function of the electron excitation energy [23]. It has been shown that the use of both modes (high-energy resolution and depth-profiling analysis) provides in-depth profile estimations of different phases in Si-containing materials [17,18]. Given this opportunity we analysed the local structure of porous and spark-processed silicon as functions of the depth.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The use of electron impact excitation for the Si L 2,3 XES at different accelerating voltages in the x-ray tube allows us to probe different layers of the target because of the pronounced dependence of the electron range and therefore of the depth of origin of the x-rays as a function of the electron excitation energy [23]. It has been shown that the use of both modes (high-energy resolution and depth-profiling analysis) provides in-depth profile estimations of different phases in Si-containing materials [17,18]. Given this opportunity we analysed the local structure of porous and spark-processed silicon as functions of the depth.…”
Section: Methodsmentioning
confidence: 99%
“…Thus, the present paper reports on investigations of the local electronic structure of porous and spark-processed silicon utilizing x-ray emission spectroscopy. It has been shown that this technique is very sensitive to the chemical bonding and its modification under different sample treatments in Si-containing materials [17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, measurements of the Si L 2,3 XES at different electron exciting energies can be used for the nondestructive depth-profiling phase analysis, because of a pronounced dependence of the x-ray yield on the electron excitation depth. With this method, we have constructed depth profiles of elements and phases within interfaces [10]. We used this method for characterization of interfaces in Fe + -implanted Si [10], W/Si multilayers [11], Si 3 N 4 thin films irradiated by an excimer laser [6], and Hf/Si and Ir/Si systems after thermal annealing [12,13].…”
Section: Introductionmentioning
confidence: 99%
“…With this method, we have constructed depth profiles of elements and phases within interfaces [10]. We used this method for characterization of interfaces in Fe + -implanted Si [10], W/Si multilayers [11], Si 3 N 4 thin films irradiated by an excimer laser [6], and Hf/Si and Ir/Si systems after thermal annealing [12,13].…”
Section: Introductionmentioning
confidence: 99%
“…5 The SiL2>3 bands of W/Si multilayers in dependence of the temperature of thermal treatment (at 250, 500, 650, 750, and 1000 °C) are present in Fig. The sensitivity of such analysis to different phase formation is determined by the energy resolution of the SiL2>3 emission band.…”
Section: Resultsmentioning
confidence: 99%