Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures

Abstract

This work studies the effects of the temperature variation, from 300K to 500K, on the electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The temperature influence on the threshold voltage, subthreshold slope, and the effective carrier mobility were analyzed. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as their major component, although there is a significant component of the ionized impurity scattering that can be identified as well. These electrical parameters were also analyzed for short channel devices with a channel length of 40nm. P-type devices showed higher degradation with the temperature as the doping concentration is higher than n-type devices.

(Digital Presentation) Comparison of Width and Temperature Influence on DIBL Effect in Junctionless and Inversion Mode Nanowire MOSFETs

“…They also are less vulnerable to short-channel effects, which are one of the main concerns when downscaling the MOS transistor (3,4). Unlike inversion mode (IM) transistors, the junctionless device has a homogeneous and uniform doping concentration from source to drain (2,5), presenting no p-n junctions, as presented in Fig. 1 (B) and (C).…”

Threshold voltage of p-type triple-gate junctionless transistors

“…Furthermore, the impact of the source-drain series resistance R sd on the dg m /dV g versus V g plot has been highlighted in planar n-type JLTs, suggesting a method to eliminate the R sd effect for extracting the parameters V th and V fb [12]. Last years, the electrical properties, the dynamic response, the effect of crystallographic orientations and reliability issues in p-type triple-gate JLTs have been studied extensively [13][14][15][16][17]. Furthermore, using the threshold voltage extracted with the g m /I d method [18], a new method for extraction of the n-type JLT parameters (flat-band voltage, fin width and doping concentration) has been proposed [19].…”