Analysis of the Ideality Factor of a-Si:H Solar Cells

Tarabsheh, Anas Al; Etier, Issa

doi:10.1115/1.4003294

Cited by 2 publications

(3 citation statements)

References 11 publications

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“…The I s increases from 9 × 10 −18 to 3 × 10 −11 A, and n increases from 1.2 to 1.94 when raising the input laser power from 0.5 to 2 W, respectively. Under higher input laser powers, the excessive photo-generated carriers result in a higher recombination (e.g., Auger, non-radiative and surface recombination) in depletion, quasi-neutral and interface regions, and therefore increase the n and I s [28][29][30] .…”

Section: Resultsmentioning

confidence: 99%

Characterizations of high-voltage vertically-stacked GaAs laser power converter

et al. 2018

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Six-junction vertically-stacked GaAs laser power converters (LPCs) with n + -GaAs/p + -Al 0.37 Ga 0.63 As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the power of 808 nm lasers. The LPC chips are characterized by measuring current-voltage (I-V) characteristics under 808 nm laser illumination, and a maximum conversion efficiency η c of 53.1% is obtained for LPCs with an aperture diameter of 2 mm at an input laser power of 0.5 W. In addition, the characteristics of the LPCs are analyzed by a standard equivalent-circuit model, and the reverse saturation current, ideality factor, series resistance and shunt resistance are extracted by fitting of the I-V curves.

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Section: Resultsmentioning

confidence: 99%

Characterizations of high-voltage vertically-stacked GaAs laser power converter

et al. 2018

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“…8 where it can be seen that n increases as a function of U, while the dependence of n on V is done already in a previous work. 12 …”

Section: -4mentioning

confidence: 97%

“…(15) is that the ideality factor n is both voltage-and illumination-dependent. 12 The plots of Figs. 5 and 6 prove that n(U,V) is in a non-decreasing function in terms of both V and U.…”

Section: -4mentioning

confidence: 99%

Description of the ideality factor of a-Si:H photovoltaic cells under different illumination intensity levels

Tarabsheh

2015

Journal of Renewable and Sustainable Energy

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This paper presents a closed form for the behavior of the ideality factor n of amorphous silicon (a-Si:H) photovoltaic cells under different illumination intensity U levels and applied voltage V. The advantage of this model, over other existing models, is its effectiveness of describing the dependency of n on both V and U even without evaluating n itself. Therefore, the errors of calculating n using various existing methods are minimized in this paper. The variations of the current voltage J/V data under different levels of U are monitored where the illumination intensity dependence of parallel resistance R p (U) is taken into account. The resulting model is a first order differential equation with non-constant coefficients whose solution expresses the variations of n in V-and U-domain. From the solution of the differential equation, it is found that n increases as V or U increases. V C 2015 AIP Publishing LLC.

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Analysis of the Ideality Factor of a-Si:H Solar Cells

Cited by 2 publications

References 11 publications

Characterizations of high-voltage vertically-stacked GaAs laser power converter

Characterizations of high-voltage vertically-stacked GaAs laser power converter

Description of the ideality factor of a-Si:H photovoltaic cells under different illumination intensity levels

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