Analysis of the Impurity Atom Distribution Near the Diffusion Mask for a Planar p-n Junction

Kennedy, David P.; O'Brien, R. R.

doi:10.1147/rd.93.0179

Cited by 105 publications

(15 citation statements)

References 5 publications

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“…Thus purity concentration and 6 is an arbitrarily small number. The impurity profile C(x, y ) is well established from the work of Kennedy and O'Brien [9].…”

Section: Computer Simulation and Experimental Resultsmentioning

confidence: 99%

An area-variable MOS varicap and its application in programmable TAP weighting of CCD transversal filters

Bhattacharyya¹,

Wallinga

1982

IEEE Trans. Electron Devices

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T. i , , and J(n) are functions of position, 0 < X < L . The coefficients J(m) are derivatives of the intrinsic 'diode characteristic at Y = V, (8). REFERENCES[ 11 M. Wolf, "Limitations and possibilities for improvement of photovoltaic solar energy converters,"Proc. IRE, vol. 48, p. 1246IRE, vol. 48, p. , 1960 [ 21 J. J. Wysocki, "The effect of series resistance on photovoltaic solar energy conversion," RCA Rev., vol. 22, p. 57, 1961. [3] R. J. Handy, "Theoretical analysis of the series resistance of a solar cell," Solid-State Electron., vol. 10, p. 765, 1967. [4] J. L. Boone and T. P. Van Doren, "Solar-cell design based on a distributed diode analysis," IEEE Trans. Electron Devices, vol. ED-25, p. 767, 1978 A. B. BHATTACHARYYA AND HANS W A L L I N G AAbstract-A new three-terminal MOS varicap is proposed where the terminal capacitors are made voltage variable not by the modulation of depletion width but by changing the area of inversion under the gate. An MOS capacitor realized on silicon with an impurity gradient along the surface provides the control on the area of inversion because the gate threshold voltage is determined by the doping concentration at the surface.The inhomogeneous doping along the surface is implemented making use of the lateral diffusion from a doped oxide surface. Fabrication details of the capacitor compatible with n-channel silicon gate technology are presented. The C-V relationship for the terminal capacitors is simulated by a piecewise model and agreement with measured results is shown.The Area-Variable MOS Varicap (AVMOSV) is used in implementing an electrically programmable CCD filter with variable TAP weighting. Computer simulation shows considerable promise of area-variable capacitors in TAP weight control and transversal filter realization. Preliminary performance characteristics of a programmable CCD filter are presented.

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“…Thus purity concentration and 6 is an arbitrarily small number. The impurity profile C(x, y ) is well established from the work of Kennedy and O'Brien [9].…”

Section: Computer Simulation and Experimental Resultsmentioning

confidence: 99%

An area-variable MOS varicap and its application in programmable TAP weighting of CCD transversal filters

Bhattacharyya¹,

Wallinga

1982

IEEE Trans. Electron Devices

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“…Further background to the processes, together with constant-and instantaneous-source solutions for linear diffusion, are given in Kennedy and O'Brien [13]. Numerical solutions to the time-dependent problem for the full diffusion coefficients for arsenic and boron, together with experimental work, are given in Warner and Wilson [26].…”

Section: Two-dimensional Diffusionsmentioning

confidence: 99%

“…For D Do we define The linear case corresponds to dopant diffusion at low concentrations and has been solved in this context by Kennedy and O'Brien [13] and Cherednichenko et al [5] (see also Townsend and Strachan [24]). The same problem has also occurred and been solved in other contexts -it is one of the heat-conduction problems discussed by Jaeger [11], and has arisen in models of electrochemical transport (Oldham [20]), random walks (Boersma and Wiegel [4]), and etching (Kuiken [17]).…”

Section: Linear Diffusion (M = 0)mentioning

confidence: 99%

Approximate solutions to a nonlinear diffusion equation

King

1988

J Eng Math

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“…The impurity atom distribution N is obtained from a two-dimensional solution of the diffusion equations [16]. Table 2 gives the impurity atom density at the emitter, base, and collector contacts and in the epitaxial collector region of the transistor design used in the present analysis.…”

Section: Theorymentioning

confidence: 99%

“…Hole and electron ionization coefficients used in the present analysis are given by Eqs. (16) and (17) respectively [17]. The generation-recombination term R is assumed to follow the Shockley-Read-Hall steady-state recombination law [19] corresponding to uniformly distributed recombination centers with a single energy level in the center of the band gap [Eq.…”

Section: • Boundary Conditionsmentioning

confidence: 99%

Two-Dimensional Analysis of High-Voltage Power Transistors

Gaur

1977

IBM J. Res. & Dev.

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The internal behavior of a typical n-p-n-n" high-voltage power transistor is presented for several specific steady-state operating conditions obtained from a two-dimensional mathematical model. Internal self-heating and avalanche multiplication effects are taken into account. Poisson's equation, electron and hole continuity equations, and the heat flow equation are solved numerically in a two-dimensional region with the input parameters of device dimensions, doping profile, boundary conditions for external contacts, and various material constants for silicon. The collector n--n+ interface is the region of high electrical and thermal stress that causes second breakdown failure at high-voltage and high-current operating conditions. The combined effects of various high-injection levels are illustrated. 306 s. P. GAUR

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Analysis of the Impurity Atom Distribution Near the Diffusion Mask for a Planar p-n Junction

Cited by 105 publications

References 5 publications

An area-variable MOS varicap and its application in programmable TAP weighting of CCD transversal filters

An area-variable MOS varicap and its application in programmable TAP weighting of CCD transversal filters

Approximate solutions to a nonlinear diffusion equation

Two-Dimensional Analysis of High-Voltage Power Transistors

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