Analysis of the influence of disk and wafer rotation speed on the SiO2 thin-film characteristics in a space-divided PE-ALD system

Lee, Baek-Ju; Seo, Dongwon; Choi, Jaehoon

doi:10.1007/s40042-021-00258-0

Cited by 3 publications

(3 citation statements)

References 5 publications

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“…The stress mechanism of SiO 2 film has been studied thoroughly, and the content is mainly divided into three categories: thermal stress, and internal and external stresses. The thermal expansion coefficient of materials is different in different situations [23]. The film-forming process is generally carried out at high temperatures (>200 • C).…”

Section: Silica Thin Filmmentioning

confidence: 99%

Development of Wide-Angle Short-Wave Pass Thin Film Based on the Ultra-Thin Silicate Glass

Dong

Xiong

et al. 2022

Materials

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With the rapid development of laser medicine, there are higher requirements placed on the performance of optical components in various medical systems. This paper is aimed at exploring the critical optical devices of medical equipment for treating periodontitis and gingivitis. The cathode sputtering method was used to produce the wide-angle short-wave pass filter, and a hundreds grid fastness test was conducted to detect the occurrence of film peeling. Considering the results of SEM, transmission spectrum, and stress test of the sample, an analysis was conducted as to the cause of poor bonding force for the film. By increasing the amount of argon gas and adjusting the baking temperature, the problem of film peeling was resolved. Besides, a short-wave pass filter film with good bonding and low roughness was obtained to meet the requirements of laser medical equipment.

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Section: Silica Thin Filmmentioning

confidence: 99%

Development of Wide-Angle Short-Wave Pass Thin Film Based on the Ultra-Thin Silicate Glass

Dong

Xiong

et al. 2022

Materials

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“…Meanwhile, for plasma formation, while an RF voltage of 13.56 MHz was dually applied to the upper chamber, 300 w/300 w was applied, respectively, at a process pressure of 0.6 torr. Typically, increasing the deposition temperature increased the density of the deposited film (Figure 2); thus, an appropriate temperature of 500 • C was applied to ensure that the DIPAS precursor did not thermally decompose [7,8]. Furthermore, the distance between the disk and showerhead was set to 7 mm, and the disk and wafer rotation speeds were set to 60 and 5 rpm, respectively, for depositing the silicon oxide thin film.…”

Section: Deposition Processmentioning

confidence: 99%

A Study on the Gap-Fill Process Deposited by the Deposition/Etch/Deposition Method in the Space-Divided PE-ALD System

2022

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This study concerns the development of a gap-fill process technology for isolating trench patterns. There are various gap-filling techniques in the case of trench patterns; nevertheless, a processing technology adopting the DED (deposition/etch/deposition) method was developed in this study. After the etch step, an Ar/O2 (1:2) plasma treatment technology reduced the residual amount of F in the films to 0.05%. By improving the etch uniformity, the deposition uniformity after the DED process on a 12-inch flat wafer was secured within <1%, and a high-quality SiO2 thin film with a dielectric constant of 3.97 and a breakdown field of 11.41 MV/cm was fabricated. The DED method can be used for gap-filling even in patterns with a high aspect ratio by changing process parameters, such as RF power and division of etch steps, according to the shape, depth, and CD size of the pattern. This study confirmed that a void-free gap-fill process can be developed in a trench pattern with a maximum aspect ratio of 40:1.

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“…A self-limiting reaction is caused by the chemical adsorption on the surface, which results in deposition of Å-level thin films individually, allowing precise thickness control. In addition, it is an essential deposition technology for next-generation semiconductor manufacturing because its step coverage characteristics in fine patterns are superior to CVD [1,2]. The ALD deposition technology is being explored vigorously in research for its use in the development of miniaturized semiconductors and perovskite solar cells.…”

Section: Introductionmentioning

confidence: 99%

Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor

Lee

Cheon

et al. 2023

Coatings

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In this study, we conducted research on manufacturing molybdenum (Mo) thin films by a thermal atomic layer deposition method using solid MoO2Cl2 as a precursor. Mo thin films are widely used as gate electrodes and electrodes in metal-oxide semiconductor field-effect transistors. Tungsten (W) has primarily been used as a conventional gate electrode, but it suffers from reduced resistivity due to the residual fluorine component generated from the deposition process. Thus, herein, we developed a Mo thin film with low resistivity that can substitute W. The MoO2Cl2 precursor used to deposit the Mo thin film exists in a solid state. For solid precursors, the vapor pressure does not remain constant compared to that of liquid precursors, thereby making it difficult to set process conditions. Furthermore, the use of solid precursors at temperatures 600 °C and above has many limitations. Herein, H2 was used as the reactive gas for the deposition of Mo thin films, and the deposition temperature was increased to 650 °C, which was the maximum processing temperature of the aluminum nitride heater. Additionally, deposition rate, resistivity change, and surface morphology characteristics were compared. While resistivity decreased to 12.9 μΩ∙cm with the increase of deposition temperature from 600 °C to 650 °C, surface roughness (Rq) was increased to 0.560 nm with step coverage of 97%. X-ray diffraction analysis confirmed the crystallization change in the Mo thin film with increasing process temperature, and a certain thickness of the seed layer was required for nucleation on the initial wafer of the Mo thin film. Thus, the molybdenum nitride thin film was deposited after the 4 nm deposition of Mo thin film. This study confirmed that crystallinity of Mo thin films must be increased to reduce their resistivity and that a seed layer for initial nucleation is required.

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Analysis of the influence of disk and wafer rotation speed on the SiO2 thin-film characteristics in a space-divided PE-ALD system

Cited by 3 publications

References 5 publications

Development of Wide-Angle Short-Wave Pass Thin Film Based on the Ultra-Thin Silicate Glass

Development of Wide-Angle Short-Wave Pass Thin Film Based on the Ultra-Thin Silicate Glass

A Study on the Gap-Fill Process Deposited by the Deposition/Etch/Deposition Method in the Space-Divided PE-ALD System

Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor

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