Analysis of the influence of diode reverse recovery on the operation and design of high-frequency rectifiers

Karadzinov, L.V.; Hamill, D.C.

doi:10.1109/63.838112

Cited by 12 publications

(4 citation statements)

References 6 publications

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“…However, most studies have focused on the numerical analysis and the empirical results with the statistical method because the factor of the failure mode is formed from the structure and the manufacturing process of the semiconductor device [13][14][15]. Moreover, the requirement for high efficiency devices has motivated the development of various semiconductor structures of the …”

Section: Failure Mode In False Operation Of Devicesmentioning

confidence: 99%

“…Also, in particular reverse-recovery characteristics of body diode (t rr or Q rr ) and gate charging capacitance (C gd ) are additionally considered. As the body diodes are used to rectify the secondary side of the PSFB converter in the DAB structure, the reverse-recovery current (I rr ), which is determined by the reverse-recovery characteristics of the DAB structure, is reflected on the primary side and added to the voltage stress of the switching devices [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

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Analysis of MOSFET Failure Modes in Bi-directional Phase-Shift Full-Bridge Converters

Oh¹,

Sung²,

Kim³

et al. 2015

Journal of Electrical Engineering and Technology

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-This paper presents an analysis of the mechanism of failure modes in bi-directional phaseshift full-bridge converters, composed of MOSFET, based on the circuit operation and parasitic parameters of MOSFET. In addition, the relation between circuit operation and parameters is suggested through an experimental comparison. From this relation, the suitable ranges of parameters for stable performance are analyzed. The design criteria of the bi-directional phase-shift full-bridge converter are presented and evaluated from the experimental verification.

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Section: Failure Mode In False Operation Of Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis of MOSFET Failure Modes in Bi-directional Phase-Shift Full-Bridge Converters

Oh¹,

Sung²,

Kim³

et al. 2015

Journal of Electrical Engineering and Technology

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“…Some of them investigates the impact of diodes on the voltage-frequency relationship, the equivalent circuit model, and derivative circuits of the converter [18]. Few works have been reported on the unusual selfsustained quasi-periodic oscillating voltage and current waveforms of the step-up resonant converter [19][20][21]. They are amplitude-modulated at a frequency apparently unrelated to the switching frequency, which is commonly referred to as Deane and Hamill (DH) phenomenon [22].…”

mentioning

confidence: 99%

Mitigation of Deane and Hamill phenomenon in gallium nitride high‐voltage power supply for electric propulsion system application

Dong,

Li,

Yin

et al. 2023

High Voltage

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The step‐up resonant converters are widely adopted to provide high voltage in kV‐level for electric propulsion system due to their high efficiency, low mass, modularisation, and high‐power density. The bipolar Cockcroft‐Walton voltage multiplier (BiCWVM) is a major circuit that steps up the voltage in the resonant converter. However, the diode non‐linearity in BiCWVM can introduce self‐sustained quasi‐periodic oscillations in the voltage and current waveforms, which is commonly known as the Deane and Hamill (DH) phenomenon. The oscillation can lead to higher magnetic loss and control failure, and it is more likely to present in the gallium nitride‐based converter due to the high‐frequency operation. The authors aim to investigate and mitigate the DH phenomenon systematically so that proper mitigation can be implemented. To facilitate the investigation, the circuit before the BiCWVM in the converter is derived and modelled as a voltage source vm and a series inductor Lsy. Also, the reverse recovery process of the diode in the BiCWVM can be represented by a piecewise‐linear (PWL) model, with the simplified circuit and PWL model, the relationship between voltage and current under different operating conditions can be determined with ease. The relationship allows to understand the mechanism of diode reverse recovery in BiCWVM that leads to DH phenomenon. Finally, a hybrid‐/full‐silicon carbide (SiC) design is proposed to mitigate the DH phenomenon, which is verified experimentally for a 300‐kHz, 5‐W, 20‐V/1.5‐kV GaN‐based step‐up resonant converter.

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“…Процесс обратного восстановления диода способен вызвать аномалии в работе схемы. Например, может являться инициатором самоподдерживающихся квазипериодических колебаний, возрастания выходного напряжения схемы или вывести транзистор из строя в схеме непосредственного преобразователя повышающего типа [1][2][3][4] и т.д. Природа возникновения этого явления вызвана тем, что при переходе из прямого смещения в обратное в диоде начинает протекать заряд обратного восстановления, т.е.…”

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Reducing the measurement error of the time of the return recovery of rapidly recovering diodes using oscilloscopes with a narrow bandwidth

Shevchenko¹,

Radioeleсtronics²,

Semyonov³

2019

Proceedings of TUSUR

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Уменьшение погрешности измерения времени обратного восстановления быстровосстанавливающихся диодов при использовании осциллографов с узкой полосой пропускания Рассмотрено воздействие осциллографа на фронты импульса тока обратного восстановления быстровосстанавливающегося диода. Установлено, что при разных длительностях фронта обратного напряжения и полосы пропускания осциллографа на переднем фронте семейства кривых тока обратного восстановления диода имеется точка пересечения, численно равная полусумме прямого тока и максимального тока восстановления (ток короткого замыкания). С помощью модели осциллографа оценено его влияние на вторую отсчетную точку времени обратного восстановления, расположенную на экспоненциальной части импульса тока. Предложенный способ коррекции экспоненциальной части импульса тока обратного восстановления быстровосстанавливающего диода совместно с выбором первой отсчетной точки позволяет уменьшить погрешность измерения времени обратного восстановления при использовании осциллографов с узкой полосой пропускания. Время обратного восстановления диода, полученное на осциллографах Rigol DS6064 и Agilent DSO9254A, расходится на 1,7%, что в 4 раза меньше по сравнению со стандартным методом. Ключевые слова: полупроводниковый диод, обратный ток диода, измерение времени обратного восстановления, переходная характеристика осциллографа, измерительный тракт.

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Analysis of the influence of diode reverse recovery on the operation and design of high-frequency rectifiers

Cited by 12 publications

References 6 publications

Analysis of MOSFET Failure Modes in Bi-directional Phase-Shift Full-Bridge Converters

Analysis of MOSFET Failure Modes in Bi-directional Phase-Shift Full-Bridge Converters

Mitigation of Deane and Hamill phenomenon in gallium nitride high‐voltage power supply for electric propulsion system application

Reducing the measurement error of the time of the return recovery of rapidly recovering diodes using oscilloscopes with a narrow bandwidth

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