Analysis of the Results of Accelerated Aging Tests in Insulated Gate Bipolar Transistors

Astigarraga, Daniel; Ibanez, Federico Martin; Galarza, Ainhoa; Echeverría, José Martín; Unanue, I.; Baraldi, Piero; Zio, Enrico

doi:10.1109/tpel.2015.2512923

Cited by 69 publications

(13 citation statements)

References 17 publications

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“…The open literature on accelerated aging tests in IGBT shows a variety of aging processes, where it was concluded by T c , I c , and V ce characteristics providing a good framework for the PHM process 26–28 . Mainly, we claim that the T c changes its waveform with degradation as it is shown in Figure 7.…”

Section: Igbt Aging Experiments System and Data Recordingmentioning

confidence: 69%

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Remaining useful life estimation for thermally aged power insulated gate bipolar transistors based on a modified maximum likelihood estimator

Ismail

Saïdi

Sayadi

et al. 2020

Int Trans Electr Energ Syst

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Power electronics converters (PCVs) such as inverters and rectifiers are crucial parts in industrial applications and energy conversion and are commonly used in several power conversion systems. Previous works have only focused on the fault diagnosis of PCVs; however, recently more consideration has been paid on predicting failures. Thus, reinforcing the reliability of power semiconductor devices is crucial for extending the lifetime of the PCVs‐based electrical power systems. This paper presents a novel prognostic approach for estimating the remaining useful life (RUL) of the power insulated gate bipolar transistors (IGBTs) used in PCVs. An IGBT‐accelerated aging database set under thermal overstress is utilized to evaluate the proposed approach. A data‐driven method based on the feature extraction process and a modified maximum likelihood estimator (MLE) technique to RUL estimation of IGBT have been developed and applied. This method is validated to effectively predict the PVC failures based on an accelerated aging experimental data set.

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Section: Igbt Aging Experiments System and Data Recordingmentioning

confidence: 69%

“…The specifications of the investigated IGBTs under healthy operating conditions are presented in Table 1. For more detailed information about this experiment, interested readers shall refer to References 25–27.…”

Section: Igbt Aging Experiments System and Data Recordingmentioning

confidence: 99%

Remaining useful life estimation for thermally aged power insulated gate bipolar transistors based on a modified maximum likelihood estimator

Ismail

Saïdi

Sayadi

et al. 2020

Int Trans Electr Energ Syst

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“…To this end, numerous lifetime models of power electronic devices have been developed. They can be divided in three categories: empirical models [6][7][8], physics-based models [9][10][11][12][13][14][15][16][17][18] and datadriven or stochastic models [19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Stress-Based Model for Lifetime Estimation of Bond Wire Contacts Using Power Cycling Tests and Finite-Element Modeling

Dornic¹,

Khatir²,

Tran³

et al. 2019

IEEE J. Emerg. Sel. Topics Power Electron.

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In this paper, a lifetime model for bond wire contacts of Insulated Gate Bipolar Transistors (IGBT) power modules is reported. This model is based on power cycling tests obtained under accelerated conditions and a finite element model taking into account the electrical, thermal and mechanical coupling. It allows to estimate the bond-wires lifetime for a large scale of junction temperature swing amplitudes (∆) and stress durations (). To build it, a numerical design of experiment was performed in both high and low stress values (∆). Then, a strain-life curve has been constructed where average strain values on a defined volume around the contact areas between top-metallization and the most exposed bond-wires to fatigue and lift-off have been used. As result, it has been shown that the total strain is linearly dependent with ∆ and power law dependent with. The combination of the strain-life relation and the strain dependency with stress parameters leads to the lifetime relationship. The obtained lifetime model has been satisfactorily validated with some additional experimental points obtained from literature and with a large range of values for. This methodology can easily be replicated to other structures and is quite generic.

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“…Wang et al [17] used the Cauer thermal network model to monitor the temperature change, but it is difficult to obtain the parameters of the model. Astigarrag et al [18] performed power thermal cycling tests on different types of parameter and showed that the case temperature, the collector current and the collector-to-emitter voltage can all be used as failure precursors for prediction and health monitoring. Hence, this study considers the case temperature as the precursor of the fault, which does not take account of the influence of the parameters, such as the collector-to-emitter voltage on the case temperature, so the prediction results have a certain error.…”

Section: Introductionmentioning

confidence: 99%

Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature

et al. 2018

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In the exploration of new energy sources and the search for a path to sustainable development the reliable operation of wind turbines is of great importance to the stability of power systems. To ensure the stable and reliable operation of the Insulated Gate Bipolar Transistor (IGBT) power module, in this work the influence of changes with aging of different electro-thermal parameters on the junction temperature and the case temperature was studied. Firstly, power thermal cycling tests were performed on the IGBT power module, and the I-V characteristic curve, switching loss and transient thermal impedance are recorded every 1000 power cycles, and then the electrical parameters (saturation voltage drop and switching loss) and the thermal parameters (junction-to-case thermal resistance) of the IGBT are obtained under different aging states. The obtained electro-thermal parameters are substituted into the established electro-thermal coupling model to obtain the junction temperature and the case temperature under different aging states. The degrees of influence of these electro-thermal parameters on the junction temperature and case temperature under different aging states are analyzed by the single variable method. The results show that the changes of the electro-thermal parameters under different aging states affects the junction temperature and the case temperature as follows: (1) Compared with other parameters, the transient thermal impedance has the greatest influence on the junction temperature, which is 60.1%. (2) Compared with other parameters, the switching loss has the greatest influence on the case temperature, which is 79.8%. The result provides a novel method for the junction temperature calculation model and lays a foundation for evaluating the aging state by using the case temperature, which has important theoretical and practical significance for the stable operation of power electronic systems.

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Analysis of the Results of Accelerated Aging Tests in Insulated Gate Bipolar Transistors

Cited by 69 publications

References 17 publications

Remaining useful life estimation for thermally aged power insulated gate bipolar transistors based on a modified maximum likelihood estimator

Remaining useful life estimation for thermally aged power insulated gate bipolar transistors based on a modified maximum likelihood estimator

Stress-Based Model for Lifetime Estimation of Bond Wire Contacts Using Power Cycling Tests and Finite-Element Modeling

Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature

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