Analysis of the Results of Silicon Sputtering Simulation as Functions of Different Ar–Si Potentials

Sycheva, A. A.; Воронина, Е. Н.; Palov, Alexander P.

doi:10.1134/s1027451019060521

Cited by 4 publications

(6 citation statements)

References 23 publications

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“…Hence, sputtering yields have been thoroughly studied in the past; yet, at low impact energies of 500 eV and below, they are less well known. Only few studies investigated ultralow-energy argon impacts [ 41 – 47 ], let alone the variation of the sputtering yields with respect to angle variations. Previous studies differ from ours in several aspects.…”

Section: Resultsmentioning

confidence: 99%

“…In the publication by Timonova et al [ 43 ], the MEAM potential is used to model 500 eV impacts at 45°, which corresponds to a specific case of our study and allowed us to cross-check another data point. In the work of Sycheva et al [ 47 ], the ZBL potential is used to examine 50–300 eV impacts at normal incidence, which is similar to our methodology and allowed us to compare our ReaxFF potential results with those from the different potentials they used. In the investigations described by Lee et al [ 45 ], Ar + and O 2 + ions were used to perform the sputtering, and the publication describes extensively the case for 0°, 40°, and 70° impacts at 500 eV.…”

Section: Resultsmentioning

confidence: 99%

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Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

Defoort-Levkov

Bahm

Philipp

2023

Beilstein J. Nanotechnol.

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Ion beam processes related to focused ion beam milling, surface patterning, and secondary ion mass spectrometry require precision and control. Quality and cleanliness of the sample are also crucial factors. Furthermore, several domains of nanotechnology and industry use nanoscaled samples that need to be controlled to an extreme level of precision. To reduce the irradiation-induced damage and to limit the interactions of the ions with the sample, low-energy ion beams are used because of their low implantation depths. Yet, low-energy ion beams come with a variety of challenges. When such low energies are used, the residual gas molecules in the instrument chamber can adsorb on the sample surface and impact the ion beam processes. In this paper we pursue an investigation on the effects of the most common contaminant, water, sputtered by ultralow-energy ion beams, ranging from 50 to 500 eV and covering the full range of incidence angles, using molecular dynamics simulations with the ReaxFF potential. We show that the expected sputtering yield trends are maintained down to the lowest sputtering yields. A region of interest with low damage is obtained for incidence angles around 60° to 75°. We also demonstrate that higher energies induce a larger removal of the water contaminant and, at the same time, induce an increased amorphization, which leads to a trade-off between sample cleanliness and damage.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

Defoort-Levkov

Bahm

Philipp

2023

Beilstein J. Nanotechnol.

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show abstract

“…Hence, sputtering yields have been thoroughly studied in the past, yet, at the low impact energies of 500 eV and below they are less well known. Only few studies investigated ultra-low energy argon impacts [38][39][40][41][42][43][44], let alone the variation of the sputtering yields with respect to angle variations. Previous studies differ from our in several aspects: Zalm et.…”

Section: Sputtering Yieldsmentioning

confidence: 99%

“…In the work of Sycheva et. al [44], the ZBL potential is used to perform 50 -300 eV impacts at normal incidence, which was similar to our methodology and allowed us to compare our ReaxFF potential results with the different potentials they used. In the investigations described by Lee et.…”

Section: Sputtering Yieldsmentioning

confidence: 99%

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Ultra-low energy amorphization of contaminated silicon samples investigated by Molecular Dynamics

Defoort-Levkov¹,

Bahm²,

Philipp³

2023

Preprint

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Ion beam processes related to focused ion beam (FIB) milling, surface patterning and secondary ion mass spectrometry (SIMS) require precision and control, the quality and cleanliness of the sample being a detrimental factor. Furthermore, several domains of nanotechnology and industry use nano-scaled samples that need to be controlled to an extreme level of precision. To reduce the irradiation-induced damage and to limit the interactions of the ions with the sample, low energy ion beams are used due to their low implantation depths. Yet, low energy ion beams come with a variety of challenges. Indeed, for such low energies, the residual gas molecules in the instrument chamber can adsorb on the sample surface and impact the ion beam processes. In this paper we pursue an investigation on the effects of the most common contaminant, water, sputtered by ultra-low energy ion beams, ranging from 50 to 500 eV and covering the full range of incidence angles, using Molecular Dynamics (MD) simulations with the ReaxFF potential. From this study we show that the expected sputtering yields trends are respected down to the lowest sputtering yields, a region of interest with low damage being obtained for incidence angles around 60 to 75°. We also demonstrate that higher energies induce a larger removal of the water contaminant and at the same time induce an increased amorphization, which produces a trade-off between sample cleanliness and damage.

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Ion beam processing with an ultra-low energy Ar+ micro-polisher: From fundamental understanding to process optimisation

Philipp,

Defoort,

Bahm

et al. 2023

Applied Surface Science

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Analysis of the Results of Silicon Sputtering Simulation as Functions of Different Ar–Si Potentials

Cited by 4 publications

References 23 publications

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

Ultra-low energy amorphization of contaminated silicon samples investigated by Molecular Dynamics

Ion beam processing with an ultra-low energy Ar+ micro-polisher: From fundamental understanding to process optimisation

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