Analysis of the series resistance and interface state densities in metal semiconductor structures

Güler, G.; Güllü, Ömer; Karataş, Şükrü; Bakkaloğlu, Ö.F.

doi:10.1088/1742-6596/153/1/012054

Cited by 21 publications

(11 citation statements)

References 19 publications

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“…where q is the electron charge, V is the definite forward-bias voltage, A is the effective diode area, k is the Boltzmann constant (8.625 × 10 −5 eV/K), T is the absolute temperature, A * the Richardson constant of 112 A cm −2 K −2 for n-type Si [1,3,35],˚b o is the effective barrier height at zero bias (which is defined by Eq. (2)), and n is the ideality factor which is a measure of conformity of the diode for the pure TE or characteristic for an ideal Schottky diode.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

Demircioğlu

Karataş

Yıldırım

et al. 2011

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 99%

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

Demircioğlu

Karataş

Yıldırım

et al. 2011

Journal of Alloys and Compounds

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“…The Richardson constant of IGZO was employed as 41 A cm 2 K 2 estimated from effective mass of m e * = 0.34m o . [23][24][25][26][27] As such is the case, ideality factors of the both printed diodes were derived to be 3.13 and 3.77, respectively, for a-IGZO and pc-IGZO. The main deviations from linearity of J (current density) -V plots (Figure 1e) for both diodes at high forward bias voltage were due to the existence of series resistances (153 KΩ for a-IGZO and 24 KΩ for pc-IGZO: Table S1, Supporting Information) resulting from the insulating layer, Al 2 O 3 .…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…The main deviations from linearity of J (current density) -V plots (Figure 1e) for both diodes at high forward bias voltage were due to the existence of series resistances (153 KΩ for a-IGZO and 24 KΩ for pc-IGZO: Table S1, Supporting Information) resulting from the insulating layer, Al 2 O 3 . [23][24][25][26][27] The summary of the said calculated values are shown in Table S1 in the Supporting Information. These deviations from the ideal thermionic case are often found in MIS Schottky diodes.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…From measurements taken on a current density versus applied bias voltage (Figure e), the two diodes showed a turn‐on voltage of 0.7 and 0.3 V, respectively, from a‐IGZO and pc‐IGZO‐based inks with sweeping from −1 to 1 V. The rectifying ratios of 1400 and 675 000, respectively, were obtained from the printed a‐IGZO and pc‐IGZO diodes. The main deviations from linearity of J (current density) – V plots (Figure e) for both diodes at high forward bias voltage were due to the existence of series resistances (153 KΩ for a‐IGZO and 24 KΩ for pc‐IGZO: Table S1, Supporting Information) resulting from the insulating layer, Al 2 O 3 . As such is the case, ideality factors of the both printed diodes were derived to be 3.13 and 3.77, respectively, for a‐IGZO and pc‐IGZO.…”

mentioning

confidence: 95%

“…These deviations from the ideal thermionic case are often found in MIS Schottky diodes. The effective barrier heights (Φ b ) were 0.946 and 0.823 eV, respectively, for a‐IGZO and pc‐IGZO, calculated by fitting the forward J – V curve (−1 V < V < 1 V) to the Cheung's function (Table S1 and Figure S7, Supporting Information) . The summary of the said calculated values are shown in Table S1 in the Supporting Information.…”

mentioning

confidence: 99%

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An Electroactive Binder in the Formulation of IGZO Ink to Print an IGZO‐Based Rectifier for Harvesting Direct Current (DC) Power from the Near Field Communication (NFC) Signal of a Smartphone

Rajbhandari

Vanaraj

Maskey

et al. 2018

Adv Elect Materials

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are fabricated by incorporating the vacuum deposition and printing methods utilizing pentacene at 869 MHz, C60 and pentacene at 300 MHz, C60 and tungsten oxide at 800 MHz and indium gallium zinc oxide (IGZO) at 16.7 GHz, respectively. [5][6][7][8] However, due to the weak nature of the signal generated from the smartphone (<1.5 Vpp), none of the aforementioned rectifiers were able to successfully interlock with the smartphone NFC signal. Furthermore, although all roll-to-roll (R2R) printed inorganic ZnO-PAN (polyaniline)-based diodes were reported to wirelessly transmit the operation power to the passive NFC sensor tag using 13.56 MHz, the rectifying efficiency was held to under 50%. [2][3][4] For the ultra high frequency region, in recent years, the printed silicon microparticles-based diodes have demonstrated the ability to interlock with smartphones using a 1.6 GHz signal. [9,10] However, in spite of the aforementioned achievements in rectifier fabrication, DC power harvesting from the coupled NFC signal of smartphones has not been demonstrated yet due to the high turn-on voltage and low rectifying efficiency of the printed diodes. [3,9,10] As such is the case, in order to harvest DC power with greater than 50% efficiency from the weak NFC signal (<1.5 Vpp) of smartphones, printed flexible rectifiers using high-performing semiconducting ink is still imperative in order to develop cost-effective and flexible NFC-sensor devices capable of interlocking with smartphones.The gravure, among well-known scalable printing methods, has been relatively well explored in terms of practicality in printing the rectifying diodes and thin film transistor (TFT)based devices. The method enables the resolution and reliability of overlay printing registration accuracy to be able to be maintained on printed patterns up to ±20 µm. [11] Therefore, in this work, the gravure method has been extensively explored in order to print a Schottky diode for the fabrication of a rectifier able to harvest DC power from the NFC signal of the smartphone. In order to employ the gravure method in printing the Schottky diode, the formulation of semiconducting ink is the most crucial step. The semiconducting layers should be able to render the Ohmic contacts solely with printed silver electrodes, as only silver nanoparticle-based gravure ink is commercially available. Furthermore, the semiconducting ink needs to have an appropriate viscosity and wetting property in order to print a homogeneous Formulating a high-performing semiconducting ink is crucial toward printing a diode for constructing a direct current (DC) power harvesting device, consisting of an antenna, a diode, and a capacitor, that can rectify the coupled weak near field communication (NFC) (13.56 MHz) signal (<1.5 Vpp) generated from smartphones. To achieve such performance, indium gallium zinc oxide (IGZO)-based semiconducting ink is formulated by developing an electroactive binder, poly(4-styrene sulfonic acid). By reducing the turn-on voltage and providing a good rheological character...

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The Importance of Schottky Barrier Height in Plasmonically Enhanced Hot‐Electron Devices

Zhao

Yin

Peng

et al. 2020

Advanced Optical Materials

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Plasmonically enhanced hot‐electron (PEH) photodiodes are a new class of optoelectronic device with the potential to be selective to spectral position, polarization, and bandwidth. Reported solid‐state PEH devices based on metal nanoparticles generally have low performance, in part, due to low collection efficiency of photogenerated hot electrons. A correlation is found between the measured external quantum efficiency (EQE) and the temperature at which the ALD‐TiO2 is deposited by atomic layer deposition (ALD) in Au–TiO2‐based PEH photodiodes. By investigating the material properties of the TiO2, it is demonstrated that the change in EQE is driven by a change in the energy levels in the semiconductor. The results show that lowering the implied Schottky barrier height increases the collection efficiency of hot electrons over the junction, in agreement with existing analytical models. This work demonstrates the crucial role that barrier height plays in hot electron devices in general, and indicates that this is an important design consideration for the improvement of PEH photodetectors.

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Analysis of the series resistance and interface state densities in metal semiconductor structures

Cited by 21 publications

References 19 publications

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

An Electroactive Binder in the Formulation of IGZO Ink to Print an IGZO‐Based Rectifier for Harvesting Direct Current (DC) Power from the Near Field Communication (NFC) Signal of a Smartphone

The Importance of Schottky Barrier Height in Plasmonically Enhanced Hot‐Electron Devices

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