Analysis of the Short-Term Response in the Drain Current of a-IGZO TFT to Light Pulses

The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

“…1(a) and (b) are with duty ratios of 33% and 83%, respectively. As can be seen, the reaction rates in many cycles are identical, which reconfirms our previous work [23].…”

“…O ) instead of electron trapping at the a-IGZO/ gate insulator (GI) interface [25]. We can see that the reaction rate is relatively large in the first few cycles and converges thereafter, which is also consistent with our previous work [23]. The temporally higher reaction rates in the beginning can averaged out with the convergent ones for the further analysis in the following section.…”

“…From figures, the concave upward curves are observed. According to our previous study [23], the observed reaction rate of V O is strongly related to the time of measurement. As duty ratio is small, the duration of illumination is accordingly short.…”

“…The different models were proposed to depict the degradation behavior of TFTs under various stress conditions involving light intensity, temperature, bias stress [13]- [19]. In our previous studies, we proposed a reaction model to describe the different reaction rate of oxygen vacancy (V O ) reacting with the light pulses [20]- [23]. Even though all the deterioration behaviors under all kinds of stress conditions are similar, the reaction rates of them are too diverse to be pictured in a unified expression.…”

P‐2: The Improved Photosensitivity of Amorphous In‐Ga‐Zn‐O TFTs with Gap‐type Structure

“…Using the same process, the a-IGZO TFTs as switches and light sensors can be monolithically fabricated on the same substrate in the display panel. However, the time response of drain current in conventional a-IGZO TFT under illumination is in the stretched-exponential formula, which limit a-IGZO to be a high sensitivity image sensor due to the slow response time [6][7][8][9]. Therefore, increasing the photosensitivity is a primary issue to solve.…”