Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions

Prasannanjaneyulu, Bhavana; Mishra, Sukalpa; Karmalkar, Shreepad

doi:10.1109/tdmr.2019.2950604

Cited by 12 publications

(1 citation statement)

References 25 publications

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“…However, the devices are reliable as can be inferred from the fact that, using the 0.7 µm gate GaN HEMT, a 1.5-2.5 GHz 4 W power amplifier with 40% power added efficiency has been successfully fabricated and tested [16]. Also, these devices were not damaged by the application of different high drain biases as in our prior work [17]. Figure 5 shows the measured component of leakage between the gate pad and source/drain via the isolation region shown by vertically downward arrows in figure 2.…”

Section: Device Structures and Measurementsmentioning

confidence: 69%

Extraction of the edge/areal components and path of the reverse gate leakage in a GaN HEMT from measurements

Prasannanjaneyulu¹,

Rawal²,

Karmalkar³

2022

Semicond. Sci. Technol.

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Reverse gate leakage, IG, limits the reliability of GaN HEMTs. We extract the components of IG flowing into the edge and area of the gate from the measured IG versus gate to source voltage, VGS, data of both low and high IG devices. The components are separated by analyzing the change in IG with gate length, LG. We estimate the short and long channel limits of LG for which the IG flows predominantly into the edge and area, respectively. Prior one-dimensional IG models based on the areal field are valid for simulating long channel devices. However, the IG of short channel devices should be modeled using the edge field, and can be reduced by techniques like field plate or high-k passivation which reduce the edge field. Also, we find the measured IG to be independent of the un-gated length, implying that IG flows via the channel rather than surface. Our work dispels any prior misperception of IG being area dominated irrespective of LG and gives the right direction for modelling and control of IG.

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Section: Device Structures and Measurementsmentioning

confidence: 69%