Abstract:This Taking into account the market need for highly responive silicon p-i-n photodiodes (PD) for detecting YAG-laser radiation (wavelength 1.064 μm), it was decided to investigate methods of increasing their responsivity, in particular, shifting the maximum of the spectral responsivity characteristic of the photodetector towards longer wavelengths, as well as to analyze the influence of various technological factors in its appearance.
Research was conducted on silicon four-element p-i-n photodiodes with guard … Show more
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