2015
DOI: 10.1140/epjc/s10052-015-3460-3
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Analysis of the strong coupling constant $$G_{D_{s}^{*}D_{s}\phi }$$ G D s ∗ D s ϕ and the decay width of $$D_{s}^{*}\rightarrow D_{s}\gamma $$ D s ∗ → D s γ with QCD sum rules

Abstract: In this article, we calculate the form factors and the coupling constant of the vertex D * s D s φ using the threepoint QCD sum rules. We consider the contributions of the vacuum condensates up to dimension 7 in the operator product expansion. And all possible off-shell cases are considered, φ, D s and D * s , resulting in three different form factors. Then we fit the form factors into analytical functions and extrapolate them into time-like regions, which giving the coupling constant for the process.

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Cited by 31 publications
(11 citation statements)
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“…7, 8, 9. In fact, metal expulsion reduces the growth of the nugget during the welding process due to the heat lost with the expelled liquid metal, and the reduction of welding current and of the heat power through the joints. [28] This can justify why the samples of the test no. 7, which experienced metal expulsion, exhibit nugget sizes similar to those of the samples of the test no.…”
Section: Microstructural and Geometrical Features Of Rsw Jointsmentioning
confidence: 99%
“…7, 8, 9. In fact, metal expulsion reduces the growth of the nugget during the welding process due to the heat lost with the expelled liquid metal, and the reduction of welding current and of the heat power through the joints. [28] This can justify why the samples of the test no. 7, which experienced metal expulsion, exhibit nugget sizes similar to those of the samples of the test no.…”
Section: Microstructural and Geometrical Features Of Rsw Jointsmentioning
confidence: 99%
“…In order to explain the atomic diffusion phenomenon between the annealed sublayers in Si-rich Si x N/ Si y N multilayers, we should figure out the growth mechanism of nc-Si at first. In previous reports, Yu et al has discussed the origin of nc-Si formation in Si suboxide matrix [23]. We think the similar mechanism can be used in the Si-rich Si x N/ Si y N multilayers as shown in Fig.…”
Section: Methodsmentioning
confidence: 57%
“…For the synthesis of [C n C 1 Im][BMB], previously reported method was used [14] and [C 10 C 1 Im][BOB] was synthesized following the method reported by Golets et al [15] Purification and physicochemical characterization of the synthesized ILs were performed according to the procedure described previously. [6,7] Each IL was dried and degassed under vacuum at 313 K for at 72 h. 1 H and 11 B NMR spectra of the studied ILs are shown in Figs S1-S6 in the Electronic Supplementary Information.…”
Section: Methodsmentioning
confidence: 99%