Analysis of the successive breakdown statistics of multilayer Al2O3/HfO2 gate stacks using the time-dependent clustering model

Muñoz-Gorriz, J.; González, M.B.; Campabadal, F.; Suñé, J.; Miranda, E.

doi:10.1016/j.microrel.2020.113748

Cited by 3 publications

(2 citation statements)

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“…[9,18,19] In this paper, we mainly focus on the distribution of conductance levels after the BD jumps, while the distribution of the time to successive BD events was carefully examined in previous works. [39,40] In these previous analysis, it was demonstrated that the time-dependent clustering model (TDCM) is needed to explain the deviations from the Weibull model in the high percentile region of the first BD distribution. [41] Moreover, this was shown to be due to variability in the background current of the devices (probably related to insulator thickness variations).…”

Section: Resultsmentioning

confidence: 99%

“…It was also demonstrated that the successive BD distributions could be nicely fitted with the TDCM up to approximately the tenth event. [39] The disagreement between model and experiment for larger number of events was attributed to time correlations which can be positive or negative. [42][43][44] The absence of correlation means that the rate of BD path generation during stress does not depend on the BD time and/or spatial location of previously opened BD filaments.…”

Section: Resultsmentioning

confidence: 99%

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Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

et al. 2023

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The ballistic conduction through narrow constrictions connecting charge reservoirs exhibits conductance quantization effects. Since the quantum of conductance G 0 = 2e 2 ∕h is only related to fundamental constants of nature, these effects might allow the implementation of a standard of resistance, fulfilling the requirements of the 2019 revised International System of Units. Moreover, this standard would be able to work at room temperature and without a magnetic field, thus allowing its on-chip implementation. In this work, the authors propose that breakdown filaments in thin oxide layers might be useful to this purpose. In particular, conductance quantization effects in nanolaminate Al 2 O 3 /HfO 2 dielectrics are reported and the role of intrinsic values of conductance and extrinsic parasitic elements are analyzed. The fact that breakdown filaments are irreversible is an advantage due to their expected stability and to the lack of cycle-to-cycle variations (as compared to resistive switching devices). Although the reported sample-to-sample variations are still too large for a real application, there is room for improving the controlover breakdown filaments through material design and electroforming conditions. Provided that this control is achieved, an on-chip implementation of a resistance standard for the realization of self-calibrating electrical systems and equipment with zero-chain traceability would be possible.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

et al. 2023

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An Assessment of Validity of the Bathtub Model Hazard Rate Trends in Electronics

et al. 2021

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The bathtub model has often been cited as a hazard rate profile that predicts not only human mortality but also the hazard rate of manufactured products. This paper examines the inapplicability of the bathtub model to predict the hazard rate of electronic components, products, and systems. The paper reviews various literature and uses numerous experiments and field failure data to support its argument. The factors affecting the hazard rate of electronics are then discussed, common hazard rate trends for electronics are identified, and recommendations for the assessment of hazard rates are given. This paper recommends that a preconceived model of hazard rate over time should not be used.

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Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

Gorriz

González

Campabadal

et al. 2020

IEEE Electron Device Lett.

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Analysis of the successive breakdown statistics of multilayer Al2O3/HfO2 gate stacks using the time-dependent clustering model

Cited by 3 publications

References 8 publications

Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

An Assessment of Validity of the Bathtub Model Hazard Rate Trends in Electronics

Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

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