2016
DOI: 10.4236/msce.2016.42004
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Analysis of the Surface Passivation Mechanisms of p-Doped Crystalline Silicon by Two Different Al<sub>2</sub>O<sub>3</sub> Coatings via Transient Photo-Conductance Measurements

Abstract: In this paper, contactless transient photo-conductance measurements are applied to p-doped mono-crystalline Silicon (p-Si) coated by two different kinds of aluminum oxide (Al2O3) layers in order to study alternative routes to the standard atomic layer deposition (ALD). The aluminum oxides layers were deposited by either spin coating or ion layer gas reaction (ILGAR ®). For both coatings an increase of the charge carrier life time is observed indicating a passivation of the p-Si surface. This study shows altern… Show more

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