Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy

Iusipova, Iu.A.

doi:10.1134/s1063782618150162

Cited by 8 publications

(3 citation statements)

References 12 publications

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“…Ранее такой анализ применялся нами для описания динамики намагниченности в элементах STT-MRAM [12][13][14]. В расчетах нами использовались численные значения физических величин из работ [19][20][21] (табл. 2).…”

Section: заключениеunclassified

SOT-MRAM-элемент На Основе Спинового Эффекта Холла: Макроспиновая Модель Двухтактного Переключения

Островская¹,

Скиданов²,

Юсипова³

2023

Журнал Технической Физики

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The article presents the results of a qualitative study of the model of a modern magnetic memory cell, in which the spin Hall effect is used for recording. Cells of square cross-section with longitudinal anisotropy of the active layer are considered. Based on the Landau–Lifshitz–Gilbert vector equation, a mathematical model for controlling the process of writing zero and one into a cell is constructed. In the approximation of a uniform distribution of magnetization, a system of equations is derived that describes the dynamics of magnetization under the action of a magnetic field and spin current. The parameters of the qualitatively equivalent dynamics of the model are determined. It has been established that at zero currents and fields in both cases there are two main stable equilibrium positions. These equilibria, depending on the mutual orientation of the magnetization vector of the active and reference layers, correspond to zero and one, written in the cell. The transition from one cell state to another is described by solving a system of differential equations. A bifurcation diagram of a dynamical system in the variables "field-current" is constructed. It is shown that with a given configuration of the memory element, external influences transfer the magnetization to an intermediate state in the plane of the free layer, which, when the current and field are turned off, leads to writing zero or one to the memory cell. The critical switching current is estimated as a function of the applied external magnetic field. Key words: spintronics, orbitronics, magnetization, Landau – Lifshitz – Gilbert equation, spin Hall effect, spin current, charge current, spin torque, longitudinal anisotropy, planar anisotropy.

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Section: заключениеunclassified

SOT-MRAM-элемент На Основе Спинового Эффекта Холла: Макроспиновая Модель Двухтактного Переключения

Островская¹,

Скиданов²,

Юсипова³

2023

Журнал Технической Физики

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“…With regard to the application of spin valves to magnetoresistive random access memory (MRAM), Iusipova [ 54 ] recently conducted a study of the switching characteristics of spin valves with longitudinal anisotropy and found that one of the most promising materials for such an application was Co 80 Gd 20 alloy (annealed at 200 °C) because of its high spin polarization parameter, which lowers the magnetic switching field, showing the potential of this kind of alloy.…”

Section: Spin Valvesmentioning

confidence: 99%

Applied Trends in Magnetic Rare Earth/Transition Metal Alloys and Multilayers

González

Andrés

Antón

2021

Sensors

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Ferrimagnetic thin films formerly played a very important role in the development of information storage technology. Now they are again at the forefront of the rising field of spintronics. From new, more efficient magnetic recording media and sensors based on spin valves to the promising technologies envisaged by all-optical switching, ferrimagnets offer singular properties that deserve to be studies both from the point of view of fundamental physics and for applications. In this review, we will focus on ferrimagnetic thin films based on the combination of rare earths (RE) and transition metals (TM).

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“…Diluted Magnetic Semiconductors, specifically, Mn-doped III-V compounds, offer unique features that allow for precise modulation of carrier spin dynamics, a crucial aspect for the advancement of spintronic devices [1]. One prominent application of these materials is in the field of Magnetic Random Access Memory (MRAM), where they enable efficient spin injection and manipulation [2]. Mn-doped III-V compounds have also found applications in magneto resistive sensors, such as Tunnelling Magneto-Resistance (TMR) and Giant Magneto-Resistance (GMR) sensors to detect and amplify magnetic fields [3,4].…”

Section: Introductionmentioning

confidence: 99%

Influence of Exchange and Correlation Interactions on the Spin Polarized Electronic Structure and Magnetic Properties of Ga0.75Mn0.25P in the B3 Blende Structure

Bouteldja,

Belabbas,

Taleb

2024

East Eur. J. Phys.

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This study focuses on investigating the influence of exchange and correlation interactions on the spin polarized electronic structure and magnetic properties of Ga0.75Mn0.25P in the B3 Zinc Blende phase. First-principle calculations were performed by systematically varying the Hartree-Fock (HF) exchange (α) value from 0 to 25% using the onsite exact-exchange functional for the treatment of the correlated electrons. The electronic and magnetic properties unveil that Ga0.75Mn0.25P manifests a half-metallic ferromagnetic behaviour at deferent values of HF exchange. Moreover, as the fraction (α) parameter increases, the band gap increases, leading to modifications in the spin polarized band structures. Additionally, our investigations indicate that exchange and correlation interactions cause an increase in the lattice parameter and volume of the compound. Furthermore, these interactions result in a decrease in the magnetic moments of P and Ga atoms, while the Mn moments increase. These findings provide valuable insights into the behavior of Ga0.75Mn0.25P and offer potential applications in the design of spintronic devices.

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Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy

Cited by 8 publications

References 12 publications

SOT-MRAM-элемент На Основе Спинового Эффекта Холла: Макроспиновая Модель Двухтактного Переключения

SOT-MRAM-элемент На Основе Спинового Эффекта Холла: Макроспиновая Модель Двухтактного Переключения

Applied Trends in Magnetic Rare Earth/Transition Metal Alloys and Multilayers

Influence of Exchange and Correlation Interactions on the Spin Polarized Electronic Structure and Magnetic Properties of Ga0.75Mn0.25P in the B3 Blende Structure

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