Analysis of the valence state of tin in ZnSnOx thin-film transistors

The primary objective of this research paper is to explore strategies for enhancing the electrical performance of dual active layer thin film transistors (TFTs) utilizing LZTO/ZTO as the bilayer architecture. By systematically adjusting the thickness of the active layers, we achieved significant improvements in the performance of the LZTO/ZTO TFTs. An XPS analysis was performed to elucidate the impact of the varying O2 element distribution ratio within the LZTO/ZTO bilayer thin film on the TFTs performance, which was directly influenced by the modification in the active layer thickness. Furthermore, we utilized atomic force microscopy to analyze the effect of altering the active layer thickness on the surface roughness of the LZTO/ZTO bilayer film and the impact of this roughness on the TFTs electrical performance. Through the optimization of the ZTO active layer thickness, the LZTO/ZTO TFT exhibited an mobility of 10.26 cm2 V−1 s−1 and a switching current ratio of 5.7 × 107, thus highlighting the effectiveness of our approach in enhancing the electrical characteristics of the TFT device.

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Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor

Guo,

Wang,

Wang

et al. 2024

Micromachines

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The electrical, stability and optoelectronic properties of GZTO TFTs with different Ga doping concentrations were investigated. Active layers were prepared by co-sputtering GaO and ZTO targets with different sputtering powers. The experimental results show that the surface of GZTO films is smooth, which is favorable for stability. The off-state current is reduced by a factor of 10, the switching ratio is increased to 1.59 × 108, and the threshold voltage shift is reduced in PBS and NBS tests. In addition, the transmittance of all devices is greater than 80% in the visible range, and the optical bandgap of the TFTs is increased from 3.61 eV to 3.84 eV after Ga doping. The current enhancement of the GZTO TFTs is more pronounced under UV irradiation, with higher responsiveness and better-sustained photoconductivity. It is proved that Ga doped into ZTO as a carrier suppressor can better combine with oxygen vacancies and reduce the concentration of oxygen vacancies and oxygen defects compared with Zn and Sn atoms, thus improving stability. GaO, as a wide bandgap material, can improve the optical bandgap of GZTO TFTs so that they can better absorb the light in the UV wavelength band, and they can be used in the field of UV photodetection.

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Analysis of the valence state of tin in ZnSnOx thin-film transistors

Cited by 3 publications

References 52 publications

Effect of Argon-oxygen Ratio on the Performance of AZTO Thin Film Transistors

Effect of Argon-oxygen Ratio on the Performance of AZTO Thin Film Transistors

Improving TFT Device Performance by Changing the Thickness of the LZTO/ZTO Dual Active Layer

Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor

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