Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers

Kiziroglou, Michail E.; Zhukov, A. A.; Li, Xiaodong; Gonzalez, David; Groot, P.A.J. de; Bartlett, Philip N.; Groot, C.H. de

doi:10.1016/j.ssc.2006.09.027

Cited by 30 publications

(25 citation statements)

References 15 publications

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“…An explanation can be obtained by taking into account the rapid decrease of the saturation current J s,TFE,r with decreasing temperature suggested in Eq. (9). This effect increases the voltage at which the cross over occurs beyond the range of measurements.…”

Section: Resultsmentioning

confidence: 99%

“…This effect increases the voltage at which the cross over occurs beyond the range of measurements. In contrast, electrodeposited Schottky barriers exhibit a spatial distribution of the SB height which results in a decreasing SB height with decreasing temperature [9]. Hence, the TFE saturation current J s,TFE is kept in levels high enough to bring the cross-over and negative temperature coefficient effects within measuring range.…”

Section: Resultsmentioning

confidence: 99%

“…As TE predicts a straight line in this diagram, this non-linear behavior confirms that this high current cannot be explained by considering only TE. To overcome this issue, the results of the thermionic emission analysis of Ni-nSi SBs can be used [9]. From C-V measurements of a Ni-nSi SB (shown as circles in Fig.…”

Section: Forward Biasmentioning

confidence: 99%

“…Electrodeposited Ni-Si SBs with lowly doped Si (n Si) exhibit a high quality Schottky barrier with very low leakage [9]. Analysis using TE models has revealed a large SB height.…”

Section: Introductionmentioning

confidence: 99%

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Thermionic field emission at electrodeposited Ni–Si Schottky barriers

Kiziroglou

Zhukov

et al. 2008

Solid-State Electronics

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a b s t r a c tCurrent transport at Schottky barriers is of particular interest for spin injection and detection in semiconductors. Here, electrodeposited Ni-Si contacts are fabricated and the transport mechanisms through the formed Schottky barrier are studied. Highly doped Si is used to enable tunneling currents. I-V, C-V and low-temperature I-V measurements are performed and the results are interpreted using tunneling theory for Schottky barriers and recent models for spatially distributed barrier heights. It is shown that, contrary to the case of lowly doped Si where thermionic emission dominates, tunneling is the dominant mechanism for reverse and low forward bias for highly doped Si. An exponential reverse bias I-V behavior with negative temperature coefficient is reported. An explanation can be found on the rapid decrease of the reverse bias I-V slope with temperature predicted by Padovani and Stratton for thermionic field emission in conjunction with the increase of the Schottky barrier height with temperature suggested for spatially distributed barrier heights.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Forward Biasmentioning

confidence: 99%

“…Electrodeposited Ni-Si SBs with lowly doped Si (n Si) exhibit a high quality Schottky barrier with very low leakage [9]. Analysis using TE models has revealed a large SB height.…”

Section: Introductionmentioning

confidence: 99%

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Thermionic field emission at electrodeposited Ni–Si Schottky barriers

Kiziroglou

Zhukov

et al. 2008

Solid-State Electronics

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“…The Ge-based SB-MOSFETs, however, suffer from increased leakage currents due to its narrow bandgap and low Schottky barrier height [1][2][3]. We have recently shown that Ni-Si diodes prepared by electrodeposition exhibit superior properties to physical vapour deposition [4,5]. In this work, we show that electrodeposited Ni-Ge and NiGe-Ge Schottky diodes on highly doped Ge exhibit near ideal Schottky barrier behaviour with low off current.…”

Section: Introductionmentioning

confidence: 77%

High-quality NiGe/Ge diodes for Schottky barrier MOSFETs

Husain¹,

Li²,

Groot³

2008

Materials Science in Semiconductor Processing

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a b s t r a c tSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here, we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB-MOSFETs. The Schottky diodes showed rectification of up to five orders in magnitude. At low forward biases, the overlap of the forward current density curves for the as-deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge bandgap. The SB height for electrons remains virtually constant at $0.52 eV (indicating a hole barrier height of $0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four-point probe measurements indicating the lower specific resistance of NiGe as compared with Ni, which is crucial for high drive current in SB-MOSFETs. We show by numerical simulation that by incorporating such high-quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current.

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