Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg

Abstract

We have investigated the dynamics of the donor-acceptor-pair (DAP) recombination in Mg-doped GaN layers grown by MOVPE as well as MBE. The observed nonexponential decay curves are perfectly described if all parallel decay channels for each donor impurity surrounded by the acceptor impurities are included. Best fits have been obtained with a donor binding energy of 32 AE 2 meV. Additionally, under resonant excitation of the donor-bound-exciton complex the excited state of the donor could be clearly identified. From these data a donor binding energy of 29:9 AE 1:0 meV has been estimated, in good agreement with the value obtained from the DAP decay. We emphasize that the analysis of the DAP decay yields an accurate estimate for the neutral acceptor concentration in GaN : Mg without any need for further electrical measurements.

A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN

“…The mean lifetime of a DAP depends on the overlap between the wave functions of the donor and acceptor, respectively. [37,38] If A 0 and D 0 are spatially close to each other, the lifetime is short. At the same time, the Coulomb term has the highest values for a nearby DAP.…”

Influence of carbon doping and hydrogen co-doping on acceptor related optical transitions in ZnO nanowires

“…As shown in figure 6, all the measured transients show multi-exponential behavior as well as the expected longer decays for distant pairs due to less wave function overlap. Thomas and Hopfield [18] analyzed the decay kinetics of DAP recombination and their analysis has been applied to other materials like GaN [28], ZnSe [29] and ZnO [20]. Based on their theory, the intensity, J t E ( ), of the emitted DAP photons with energy E at a time t is given by…”