Analysis of titanium and vanadium oxide thin film by method of reactive co-sputtering

Abstract

A systematic simulation based on Berg's model and theoretic study of co-reactive sputtering of titanium and vanadium targets is presented. It enables one to predict the hysteresis effect and intermediate composition of the deposited film as a function of different targets current in the co-reactive sputtering process. With this approach, it is possible to obtain different stoichiometry of thin film by choosing different ratio of vanadium target current to titanium target current. In this case, the material composition in the thin film with respect to the fraction of these two targets current can be optimized. Finally, the deposition rate of co-reactive sputtering as a function of total sputtering rate of two metal material atoms is also described.

Characterization and Electrochemical Performances of Vanadium Oxide Films Doped with Metal Ions

“…Reactive-sputtering is a common process for deposition of vanadium oxides. [2][3][4] In the present work, vanadium films prepared by sputtering have been characterized by several methods and the electrochemical lithium intercalation in vanadium oxide film has been examined. [5] But these methods are too complex and difficult to control.…”