Analysis of Transport Processes in Vertical Cylinder Epitaxy Reactors

Manke, Charles W.; Donaghey, L.F.

doi:10.1149/1.2133351

Cited by 68 publications

(34 citation statements)

References 18 publications

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“…(13) requires the specification of a number of variables, including: the film or boundary layer thickness ; the mole fraction of the species in the bulk-gas stream Ao ; the steady-state quasi-equilibrium mole fraction A (at the substrate surface); total pressure P; and temperature T. As described by Rosner,20) mass-transfer by ordinary diffusion principally depends on the thickness of the boundary layer; the latter, which depends on flow-velocity and physical properties (density, viscosity) of the gas-stream, can be determined experimentally. [21][22][23][24] Knowledge of the film thickness, usually prerequisite in the study of crystal growth, can also be gained from empirical masstransfer correlations such as, 25) …”

Section: Methods Of Calculation Of Ratesmentioning

confidence: 99%

Modeling of Silicon Vapor Phase Epitaxy Using Stefan-Maxwell Formalism

Rajagopal

Rao

2004

Mater. Trans.

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The vapor-phase homoepitaxy of monocrystalline silicon by reduction of chlorosilanes is modeled using a novel approach. With digital computer calculation, the growth rate of silicon is predicted under ambient pressure (1.0 atm or 101.325 kPa) in the high-temperature regime 1200-1600 K, where silicon growth is expected to be mass-transport limited. This study considers four different initial stoichiometries, namely, 0.1% SiH 4 + 0.4% HCl + H 2 , 0.1% SiCl 4 + H 2 , 0.5% SiCl 4 + H 2 , and 0.2% SiHCl 3 + H 2 in the Si-Cl-H system in order to make comparisons between the predicted and the experimentally determined growth rates. By combining the iterative equilibrium constant method with the StefanMaxwell relations for diffusion in a multi-component gas-phase, the respective molar fluxes of nine gaseous species that include SiCl 4 , SiHCl 3 , SiH 2 Cl 2 , SiH 3 Cl, SiH 4 , SiCl 2 , SiCl, SiCl 3 , and Si(g) were computed for steady-state condition; and the data on fluxes enabled the determination of the net silicon flux to the surface of the substrate. The computed rates were compared to the measured deposition rates of silicon.

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Section: Methods Of Calculation Of Ratesmentioning

confidence: 99%

Modeling of Silicon Vapor Phase Epitaxy Using Stefan-Maxwell Formalism

Rajagopal

Rao

2004

Mater. Trans.

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“…[10][11][12][13][14][15][16][17][18] Most of these have modeled the epitaxial growth of Si and SiGe layers, and they can be divided into two main groups. The first covers models that were developed on the basis of the boundary-layer theory and only consider physical diffusion effects (e.g., Refs.…”

Section: -5mentioning

confidence: 99%

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

Mohammadi

Boer

Nanver

2012

Journal of Applied Physics

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In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B 2 H 6 ) as gas source on a nonrotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions by applying the actual parabolic gas velocity and temperature gradient profiles in the reactor. These are calculated theoretically and also simulated with FLUENT software. The influence of an axial and lateral diffusion of diborane species and the validity of the model for laminar flow in experimental CVD processes are also treated. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface H-coverage, and reactor dimensions. By only adjusting these reactor/process parameters, the model was successfully transferred from the ASM Epsilon One to the Epsilon 2000 reactor which has totally different reactor conditions. The model's predictive capabilities have been verified by experiments performed at 700 C in these two different ASM CVD reactors. V C 2012 American Institute of Physics. [http://dx

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“…The obtained PDE system was solved through the commercial finite elements code FIDAP [13]. The adopted chemico-physical parameter are summarized in Table 2, being all the values obtained from literature compiIations [4,14]. …”

Section: Modelingmentioning

confidence: 99%

Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors

1995

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the epitaxial silicon chemical vapor deposition by SiClq/H2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusers, susceptor tilting angle) and deposition conditions (i.e., flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.

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Analysis of Transport Processes in Vertical Cylinder Epitaxy Reactors

Cited by 68 publications

References 18 publications

Modeling of Silicon Vapor Phase Epitaxy Using Stefan-Maxwell Formalism

Modeling of Silicon Vapor Phase Epitaxy Using Stefan-Maxwell Formalism

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors

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