Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Xu, X. B.; Li, B.; Chen, Y. Q.; Wu, Zhaohui; He, Zhiyuan; Liu, L.; He, Shilie; En, Yunfei; Huang, Yun

doi:10.1109/jeds.2020.3040445

Cited by 13 publications

(5 citation statements)

References 33 publications

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“…However, both extractions of N t show the highest values in Device C. Device C with a p-GaN gate layer demonstrates a trap density in the range of 1.5 × 10 19 -2.7 × 10 19 cm −3 eV −1 which is about one order of magnitude larger than devices without a p-GaN gate layer under different drain current similar to the others published AlGaN/GaN HEMT devices [18,19]. The possible cause is supposedly due to Mg out-diffusion from the p-GaN layer into the AlGaN barrier layer or GaN channel layer [20,21]. Meanwhile, the measured N t values vary with input gate overdrive voltages indicating the Fermi level changes at the AlGaN/GaN interface [13].…”

Section: Lfn Measurement and Analysissupporting

confidence: 70%

Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer

Yang¹,

Hsin²

2021

Semicond. Sci. Technol.

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In this paper, low-frequency noise characteristics of commercial AlGaN/GaN high electron mobility transistors with different substrates and devices with and without a p-GaN gate layer are measured and discussed. The noise power spectral density (PSD) of various devices are compared and analyzed under linear-region operation. The 1/f noise behavior exhibits carrier number fluctuation as the dominant cause. Devices with p-GaN gate layer fabricated on Si substrate show the highest normalized noise PSD. Results show that not only flicker noise (1/f noise) exists but that it also accompanied by generation–recombination noise (g–r noise) in the device on SiC substrate. The extracted g–r noise related traps show an activation energy of ∼0.37 eV, which is mostly caused by spatial charges trapping/detrapping with the deep acceptor in the GaN buffer layer.

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Section: Lfn Measurement and Analysissupporting

confidence: 70%

Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer

Yang¹,

Hsin²

2021

Semicond. Sci. Technol.

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“…This is strong evidence that the flicker noise is dominated by the number fluctuations (Δ N ) mechanism, [ 11 ] which has been frequently found in GaN‐based D‐mode HEMT [ 12,13 ] and (nonregrowth) E‐mode HEMT. [ 14 ] In this Δ N case, explained by the McWhorter model, [ 15 ] the 1/ f noise is induced by the fluctuations of the interfacial charge, resulting from trapping/detrapping processes of free electrons in border traps close to the channel interface. Therefore, the normalized drain current can be described in proportion to the transconductance g m through

\frac{S_{id}}{I_{ds}^{2}} = S_{Vfb} {(\frac{g_{m}}{I_{ds}})}^{2}

where S Vfb is the input‐referred voltage noise PSD at flat‐band voltage and is a constant factor.…”

Section: Resultsmentioning

confidence: 99%

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Hsu

Simoen

Liang

et al. 2021

Physica Status Solidi (a)

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To investigate the defects from the gate regrowth process, samples with and without regrowth p‐GaN process are fabricated by metalorganic chemical vapor deposition (MOCVD). The DC characteristics indicate larger gate leakage (Igs) between the GaN channel and the p‐GaN gate in the regrowth sample than in the nonregrowth counterpart. In addition, significant Si/O impurities are introduced by the regrowth process at the interface between channel and regrown AlGaN barrier. The low‐frequency noise (LFN) measurement and deep‐level transient spectroscopy (DLTS) are further carried out to investigate the defectivity at the AlGaN barrier and channel interface, giving a 2–3 times higher border trap density in the AlGaN barrier (depth ≈5 nm from the channel interface) and a 10 times increase in interface trap density at the channel interface, corresponding with a band of shallow levels E3 = Ec–0.02–0.15 eV. Three additional bulk traps E2/E5 (Ec–0.8 eV, σn=5×10−15 cm2 / Ec–0.17 eV, σn=5×10−22 cm2) and E4 (Ec–0.23 eV, σn=5×10−19 cm2) are also found in the regrowth and nonregrowth samples, respectively. Their possible spatial locations and origins are discussed.

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“…However, owing to the lack of discharge path in the gate electrode of the p-GaN HEMTs, the devices exhibit poor ESD robustness in the gate-to-source condition, with an equivalent V HBM of only 0.2~0.33 kV. E. Canato [15] and Yiqiang Chen [16,17] reported the gate-tosource ESD failure and degradation mechanisms of p-GaN HEMTs, which mainly rely on the trapping effect and device geometry. To improve the gate-to-source ESD robustness for the p-GaN HEMT, Xin et al reported a unidirectional AlGaN/GaN ESD protection diode based on a self-triggered discharging channel [14].…”

Section: Introductionmentioning

confidence: 99%

A Novel Bidirectional AlGaN/GaN ESD Protection Diode

et al. 2022

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Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the ESD robustness of a GaN power system. In this study, an AlGaN/GaN ESD protection diode with bidirectional clamp capability was proposed and investigated. Through the combination of two floating gate electrodes and two pF-grade capacitors connected in parallel between anode or cathode electrodes and the adjacent floating gate electrodes (CGA (CGC)), the proposed diode could be triggered by a required voltage and possesses a high secondary breakdown current (IS) in both forward and reverse transient ESD events. Based on the experimental verification, it was found that the bidirectional triggering voltages (Vtrig) and IS of the proposed diode were strongly related to CGA (CGC). With CGA (CGC) increasing from 5 pF to 25 pF, Vtrig and IS decreased from ~18 V to ~7 V and from ~7 A to ~3 A, respectively. The diode’s high performance demonstrated a good reference for the ESD design of a GaN power system.

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Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Cited by 13 publications

References 33 publications

Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer

Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

A Novel Bidirectional AlGaN/GaN ESD Protection Diode

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