Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Abstract

The aim of this article is to show that it is possible to rapidly estimate the activation energies of electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurements with photoionization techniques using Infra‐Red (IR) illumination. This technique avoids the time‐consuming task of performing electrical measurements at different temperatures in order to determine the activation energies of the electron traps using Arrhenius laws. Thus, a deep level at 1.3 eV was detected and attributed to the presence of carbon in GaN buffer of the component. Moreover, we have highlighted that the trapping effect can be screened when the transistors are biased with a high drain‐source voltage during pulsed measurements.This article is protected by copyright. All rights reserved.