Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash&lt;sup&gt;&amp;#x00AE;&lt;/sup&gt; after program/erase cycling

Kuo, Chao-Wei; Hsu, Chia‐Jung; Lo, Chen‐Tsyr; Kuo, Jui-Min; Lee, Wei-Min; Shen, Cheng-Yen; Sun, Wein–Town

doi:10.1109/imw.2013.6582135

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2023

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“…1(d) shows the obvious clockwise hysteresis of ZnO flash memory with different aspect ratios. The memory window of flash with 10 nm thick ZnO floating gate reaches up to 9.8V (V T = 5.8V in programming state and V T = -4V in erasing state for the TFT with the aspect ratio of 5µm/5µm) under the sweeping gate voltage from -10 V to +15 V, which greatly exceeds the traditional silicon-oxygen-nitrogenoxygen-silicon (SONOS) structure [25], [26]. It is fully proved that ZnO thin film is a very suitable material for floating gate due to its large amounts of donor-like defects providing free electronics [15].…”

Section: Resultsmentioning

confidence: 93%