Analysis of W-shape melt/crystal interface formation in Czochralski silicon crystal growth

Abstract. For discovering the principle of processing parameter combination for the stable growth and better wafer quality of ĭ450 mm Czochralski grown silicon single crystal (shortly called Cz silicon crystal), the effects of crystal rotation rate and crucible one on the V/G ratio were simulated by using CGSim software. The results show that their effect laws on the V/G ratio for ĭ450 mm Cz silicon crystal growth are some different from that for ĭ200 mm Cz silicon one, and the effects of crucible rotation rate are relatively smaller than that of crystal one and its increasing only makes the demarcation point between two regions with different V/G ratio variations outward move along radial direction, and it promotes the wafer quality to weaken crystal rotation rate and strengthen crucible one.

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“…Previous experiments confirmed the correct predictions simulated by the software [6][7][8]. The main structure of the furnace is showed in Fig.…”

Section: Model Descriptionsupporting

confidence: 77%

“…The exterior temperature was set to 300 K and shielding gas Ar was blown at a constant rate. The energy balance equation of melt/crystal interface is shown as following [6]:…”

Section: Model Descriptionmentioning

confidence: 99%

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Guan

Zhang

2016

MATEC Web Conf.

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“…The deflection curves imply that a high furnace wall emissivity results in flatter interface shapes. Profound interface deflections lead to high thermoelastic stresses inside the crystal [9,23]. Higher wall emissivity is likely to induce lower stresses inside the crystal.…”

Section: Steel Furnace Wallmentioning

confidence: 99%

“…Higher wall emissivity is likely to induce lower stresses inside the crystal. For ε 0.4, the so-called W-shape interface may form for which the location of the maximum deflection along the interface is gradually shifted from the centre of the crystal towards the triple point [9]. The interface deflection at this point becomes less sensitive to the emissivity.…”

Section: Steel Furnace Wallmentioning

confidence: 99%

“…Therefore, numerical simulations are used to provide an overall map of the heat and mass transfer inside the furnace. Numerical modelling has been used in several studies in order to investigate the effect of growth parameters such as crystal and crucible rotation rates on the thermal field and flow patterns [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon

Noghabi¹,

M’Hamdi²,

Jomâa³

2012

Meas. Sci. Technol.

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Reliability of the numerical simulation results strongly depends on the input data, in particular on the thermo-physical properties of the furnace components, e.g. graphite thermal conductivity and steel surface emissivity. Uncertainties are always involved in the measurement of these parameters. A set of global 2D simulations has been carried out in order to investigate the impact of each property on the growth conditions in Czochralski silicon growth furnaces. The results indicate that steel emissivity and felt conductivity have significant impact on the calculated thermal field and energy consumption.

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Data‐Driven Cz–Si Scale‐Up under Conditions of Partial Similarity

Dropka,

Böttcher,

Chappa

et al. 2024

Cryst. Res. Technol.

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In Cz–Si growth, the shape of the solid–liquid interface and the v/G ratio significantly impact crystal quality. This study utilizes a data‐driven approach, employing multilayer perceptron (MLP) neural networks and Bayesian optimization, to investigate the scale‐up process of Cz–Si under conditions of partial similarity. The focus is on exploring the influence of various process and furnace geometry parameters, as well as radiation shield material properties, on the critical measures of crystal quality. Axisymmetric CFD modeling produces 340 sets of 18D raw data, from which 14‐dimensionless derived data tuples are generated for the design and training of the MLP. The best MLP obtained demonstrates the ability to accurately assess the complex nonlinear dependencies among dimensionless numbers derived from CFD data and, on the output side, interface deflection and v/G. These relationships, crucial for scale‐up, are successfully generalized across a wide range of parameters.

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Analysis of W-shape melt/crystal interface formation in Czochralski silicon crystal growth

Cited by 18 publications

References 21 publications

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon

Data‐Driven Cz–Si Scale‐Up under Conditions of Partial Similarity

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