2016
DOI: 10.1016/j.tsf.2016.05.047
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Analysis of X-ray diffraction curves of trapezoidal Si nanowires with a strain distribution

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Cited by 1 publication
(2 citation statements)
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“…6(a) and 6(b), respectively. Similar peak-shape fits have been reported for nanowires (Takeuchi et al, 2016) and -particles (Cervellino et al, 2003;Masadeh et al, 2007). Since the residuals showed 0.06-0.07 (Cervellino et al, 2003) and 0.09-0.27 (Masadeh et al, 2007) for the particles, the value of our R min (0.13) is in a suitable range even though the systems are different.…”
Section: D Gaussian Fit For An Equivalent and Homogeneous Systemsupporting
confidence: 83%
See 1 more Smart Citation
“…6(a) and 6(b), respectively. Similar peak-shape fits have been reported for nanowires (Takeuchi et al, 2016) and -particles (Cervellino et al, 2003;Masadeh et al, 2007). Since the residuals showed 0.06-0.07 (Cervellino et al, 2003) and 0.09-0.27 (Masadeh et al, 2007) for the particles, the value of our R min (0.13) is in a suitable range even though the systems are different.…”
Section: D Gaussian Fit For An Equivalent and Homogeneous Systemsupporting
confidence: 83%
“…A Gaussian fit is a conventional and useful spot-shape fitting method which can be used for XRD analysis of nanoparticles and -wires (Cervellino et al, 2003;Takeuchi et al, 2016). Firstly, we performed a fit of the measured peak shapes by a 1D Gaussian function with a homogeneous strain and domain size for the 041 and 042 spots in the 2D RSM, instead of the classical peak-center and broadening analyses.…”
Section: D Gaussian Fit For An Equivalent and Homogeneous Systemmentioning
confidence: 99%