Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method

Abstract

III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.

Research on the processing algorithm for solar cell characterization data

“…When the measured sample absorbs a certain amount of radiation energy, the σ electrons in the single bond, the π electrons in the double bond, and the n electrons in the lone pair of the molecule or ion in the sample may transition to a higher energy level, and this transition of the valence electrons leads to the formation of the absorption spectrum 10 . Therefore, the absorption spectrum can reflect the internal electron transition of the molecule or ion, and utilized to analyze the composition of the sample, the band gap width of semiconductor materials, etc.…”