Analysis on the Electrostatic Doping and Several Alternative Devices

Abstract

With the development of semiconductor technology, the size of precision instruments is becoming more and more stringent. The purpose of electrostatic doping is to provide a possibility on nanoscale semiconductor devices and to replace chemical doping, it also replaces donor/receptor doping with Gate-Induced free electron/hole charges in ultra-thin MOS (Metal-Oxide-Semiconductor) structures, and provide some areas with high electron/hole density in semiconductor devices. This paper introduces Electrostatic Doping methods and Several Alternative Devices, emphasizing the functions of metal and semiconductor operation functions, energy band gaps and applied electric fields, and their interaction in induced ED. In addition, this paper discusses the advantages of ED devices and the major potential obstacles to future CMOs, and the modeling and experimental implementation of this approach will help to implement and evaluate the possibility of replacing traditional doping methods for innovative devices for future CMOs.