Analytic description of scanning capacitance microscopy

Abstract

Scanning capacitance microscopy ͑SCM͒ is a doping profile extraction using a nanometric probe as a gate of a metal-oxide-semiconductor ͑MOS͒ structure and measuring the differential capacitance. Thanks to the complete MOS equations, the authors propose in this article a description of the differential capacitance calculation. This analytic presentation is based on the solution of the Poisson-Boltzmann equation in the unidimensional mode in silicon and a decomposition of the probe in elementary rings giving capacitance from the surface probe and silicon. As ͓dC͑V g ͒ / dV g ͔␣͑d⌿ s / dV g ͒, this presentation yields to the importance of the surface band bending ⌿ s at the oxide-semiconductor interface. The dC͑V g ͒ / dV g calculation shows that the contact of the probe with the sample has its main contribution over a few nanometers. Results are discussed to obtain a calibration of a SCM probe available in a large range of doping and voltage and to assess the dC͑V g ͒ / dV g signal after erosion of the probe by successive scans.

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

“…Precise control of substrate temperature is of principal importance for the ternary AlSb y As 1−y (Sample D) and the quaternary Al x Ga 1−x Sb y As 1−y (Sample E) layers since it directly controls the incorporation ratio of Sb and As and thus the lattice parameter. Growth of Al(Ga)SbAs compounds (Samples D and E) following the hydrogen-assisted oxide removal process enables smooth buffer layers to be grown free of pyramidal defects typically observed on the sur-face of GaSb grown on GaSb [17].…”

Low-temperature and high magnetic field dynamic scanning capacitance microscope

“…2 exactly mean. We therefore adapt a simple model 26 to investigate the effects of the tip geometry and the resistivity and capacitance of the sample. Fig.…”

Diffused junctions in multicrystalline silicon solar cells studied by complementary scanning probe microscopy and scanning electron microscopy techniques

“…In both cases, a great deal of work has gone into quantifying the doping contrast so that dopant densities can be accurately, and directly, extracted from the images (see, e.g., [2][3][4][5]). This effort has been complicated due to the multiple origins of the doping contrast, and the fact that the contrast is highly influenced by the surface characteristics of the device, including surface densities of states, charge, surface band-bending, oxide thickness, and contamination.…”