2017
DOI: 10.1109/ted.2017.2686359
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Analytic $JV$ -Characteristics of Ideal Intermediate Band Solar Cells and Solar Cells With Up and Downconverters

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Cited by 21 publications
(7 citation statements)
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“…There have been a number of device models developed specifically for IB materials, mostly for solar cells, all in steady state. These include traditional [6,[28][29][30]and Boltzmann-approximation [31,32] detailed balance models, semianalytic models in the drift [33] and diffusion [24,34,35] limits, and PDD models [25][26][27]36]. The semianalytic models are specific to either the drift or diffusive limits, while the PDD models allow treatment of IB regions that are neither fully depleted nor fully quasi-neutral.…”
mentioning
confidence: 99%
“…There have been a number of device models developed specifically for IB materials, mostly for solar cells, all in steady state. These include traditional [6,[28][29][30]and Boltzmann-approximation [31,32] detailed balance models, semianalytic models in the drift [33] and diffusion [24,34,35] limits, and PDD models [25][26][27]36]. The semianalytic models are specific to either the drift or diffusive limits, while the PDD models allow treatment of IB regions that are neither fully depleted nor fully quasi-neutral.…”
mentioning
confidence: 99%
“…This model has been used and validated in many papers and gives the correct electrical characteristic relationship. [48][49][50][51] The open circuit voltage (V oc ) calculated from J by the Shockley diode equation is…”
Section: Resultsmentioning
confidence: 99%
“…Next, we used the Shockley diode model to study overall performance of realistic perovskite/c‐Si solar cell. This model has been used and verified in many papers and can give correct relationships of electrical characteristics. The open‐circuit voltage ( V oc ) calculated from the J sc by the Shockley diode equation is given as Voc=kbTqln()JscJ0+1, where k b is the Boltzman constant and T is the room temperature (298 K).…”
Section: Methods and Validationmentioning
confidence: 99%
“…where, as illustrated in Figure 1C, R ext is the normalized reflectance at the initial interface, T θ is the transmittance of an incident light at angle Next, we used the Shockley diode model to study overall performance of realistic perovskite/c-Si solar cell. This model has been used and verified in many papers [35][36][37][38]…”
Section: Introductionmentioning
confidence: 99%