Analytic model for ion channeling in successive implantations in crystalline silicon

Atomic spectrometry update. Atomic mass spectrometry

“…As a fast alternative to advanced Monte Carlo simulations, a simple analytical model was developed to calculate the dopant profiles from successive implantation steps without the need of fitting parameters. 146 The model was applied to over 40 implantation schemes used in state-of-the-art complementary metal-oxide semiconductor technology. The results from the analytical model showed good agreement with those obtained from calibrated Monte Carlo methods as well as with the experimental SIMS depth profiles.…”

Simulation of doping profile formation: Historical evolution, and present strengths and weaknesses

“…For several subsequent implants into crystalline silicon, the reduction of ion channeling due to damage accumulation has been described by a calibrated reduction of the fractions of ions in the channeling tail. 17 For an analytic representation of crystal damage in 1D, Gaussian functions with joint exponential tails 18 and tabulated sampling calibration of profile coefficients 19 have been suggested.…”