Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs

Taur, Yuan

doi:10.1109/16.974719

Cited by 308 publications

(151 citation statements)

References 12 publications

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“…This is because, for devices with thick doped layers, at low doping levels, the body is fully depleted and the potential at the centre of the silicon film is not fixed. Thus, the potential inside the silicon film moves as a whole along with the applied gate voltage in the subthreshold region [37]. As the doping level further increases to a certain level, the centre potential of the silicon film remains unchanged even under large gate voltages.…”

Section: Effect Of Layer Doping the Dg Mosfet Channelmentioning

confidence: 95%

Threshold Voltage Control through Layer Doping of Double Gate MOSFETs

Joseph¹,

George²,

Mathew³

2010

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures-one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre-are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.

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Section: Effect Of Layer Doping the Dg Mosfet Channelmentioning

confidence: 95%

Threshold Voltage Control through Layer Doping of Double Gate MOSFETs

Joseph¹,

George²,

Mathew³

2010

JSTS:Journal of Semiconductor Technology and Science

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“…When the backgate oxide thickness approaches that of the front gate, SOI conceptually becomes DG. Recently, there has been intense research interest in the development of compact models for SOI/DG MOSFETs [11][12][13][14][15]. Most of the models are integrable ones [7,11,13]; some are iterative [11,15] and others are explicit [13,14].…”

Section: Introductionmentioning

confidence: 99%

“…Most of the models are integrable ones [7,11,13]; some are iterative [11,15] and others are explicit [13,14]. Undoped s-DG/a-DG MOSFETs were analyzed by Taur [11]. Ortiz-Conde et al presented an approximate solution to the undoped s-DG surface potential [13] in comparison with the iterative one, and an implicit solution by numerical iteration [15] for generic doped MOSFETs with two gates.…”

Section: Introductionmentioning

confidence: 99%

“…Ortiz-Conde et al presented an approximate solution to the undoped s-DG surface potential [13] in comparison with the iterative one, and an implicit solution by numerical iteration [15] for generic doped MOSFETs with two gates. Undoped s-DG MOSFETs have been solved both implicitly [16][17][18] and analytically [18][19][20], while undoped asymmetric cases have only been solved implicitly in literature [11]. Subthreshold characteristics in short channel double-gate MOSFETs has also been solved analytically [26].…”

Section: Introductionmentioning

confidence: 99%

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A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

Zhu¹,

Yan²,

Xu³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.

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“…In the last years, 1-D analytical modeling of both symmetric Malobabic et al, 2004) and asymmetric (Taur, 2001) DG SOI MOSFETs has been used for the description of their DC electrical behavior and the understanding of the device physics.…”

Section: Introductionmentioning

confidence: 99%

Results and limits in the 1-D analytical modeling for the asymmetric DG SOI MOSFET

Cobianu

Glesner

2008

Adv. Radio Sci.

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Abstract. This paper presents the results and the limits of 1-D analytical modeling of electrostatic potential in the low-doped p type silicon body of the asymmetric n-channel DG SOI MOSFET, where the contribution to the asymmetry comes only from p-and n-type doping of polysilicon used as the gate electrodes. Solving Poisson's equation with boundary conditions based on the continuity of normal electrical displacement at interfaces and the presence of a minimum electrostatic potential by using the Matlab code we have obtained a minimum potential with a slow variation in the central zone of silicon with the value pinned around 0.46 V, where the applied V GS voltage varies from 0.45 V to 0.95 V. The paper states clearly the validity domain of the analytical solution and the important effect of the localization of the minimum electrostatic potential value on the potential variation at interfaces as a function of the applied V GS voltage.

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Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs

Cited by 308 publications

References 12 publications

Threshold Voltage Control through Layer Doping of Double Gate MOSFETs

Threshold Voltage Control through Layer Doping of Double Gate MOSFETs

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

Results and limits in the 1-D analytical modeling for the asymmetric DG SOI MOSFET

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