2016
DOI: 10.1016/j.electacta.2016.09.115
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Analytical 3D migration model of steady-state metal anodizing: the velocity fields and trajectories of inert tracers, metal and oxygen ions

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Cited by 13 publications
(4 citation statements)
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“…Then, their concentration decreases and becomes almost zero at the aluminum oxide/metal interface as well as at cell-wall boundaries. The distribution of incorporated anions in pore walls and the barrier layer is in agreement with theoretical models calculated by Mirzoev et al [86,87]. A special case of anodizing in chromic acid is characterized by the absence of incorporated anions (Figure 5d).…”
Section: Mechanism Of Anions Incorporation: Duplex and Triplex Structuresupporting
confidence: 89%
“…Then, their concentration decreases and becomes almost zero at the aluminum oxide/metal interface as well as at cell-wall boundaries. The distribution of incorporated anions in pore walls and the barrier layer is in agreement with theoretical models calculated by Mirzoev et al [86,87]. A special case of anodizing in chromic acid is characterized by the absence of incorporated anions (Figure 5d).…”
Section: Mechanism Of Anions Incorporation: Duplex and Triplex Structuresupporting
confidence: 89%
“…SEM images of ATO PhCs x35 etched at U=0 and 40 V are shown in figure 8. Pore diameter and porosity of ATO PhC etched at U=40 V are clearly higher than the Existent theories of anodizing of valve metals deal with processes that occurred at the pore bottom: field-assisted dissolution [44] and field-assisted ejection theories [45], plastic flow model [46], and migration model [47]. The etching process of ATO cell walls is associated solely with chemical reactions between the anodic oxide and fluoridecontaining electrolyte species [26,[48][49][50][51][52][53].…”
Section: The Etching Of Ato Phcs Under Anodic Polarizationmentioning
confidence: 89%
“…However, a vast amount of experimental data contradicting FAD model has been accumulated to date. In particular, the FAD model incorrectly predicts the experimental growth rate of AAO porous films, 10 it is also incapable of describing the non-monotonous distribution of impurities inside cell walls 11 and the existence of narrow windows of anodizing conditions leading to the self-ordering of pores. 12,13 These phenomena have prompted the development of alternative models, one of which considers the presence of viscous flows of anodic oxide at the pore bases.…”
mentioning
confidence: 99%
“…14 Using these considerations, the authors have explained the experimentally observed pathways of W atoms embedded as tracers into the metal layer being anodized. 14,15 Recently, the analytical model has been suggested 10,16 allowing to calculate the pathways of neutral and charged tracers by means of equations describing the ions migration inside the barrier layer of AAO films. Without recourse to the viscous flow model, the authors of the research succeeded to explain a number of experimental observations, including the distribution of W tracers 14,15 and the presence of pure and electrolyte-contaminated layers in the structure of AAO cell walls.…”
mentioning
confidence: 99%