Analytical analysis and modelling of variation in gate capacitance of subthreshold MOSFET

Banchuin, Rawid; Chaisricharoen, Roungsan

doi:10.1109/jictee.2014.6804063

Cited by 2 publications

(11 citation statements)

References 13 publications

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“…Here, C g which can be defined as the total capacitance seen by looking in to the gate terminal of the MOSFET as shown in Figure 1, can be given in terms of the gate charge, Q g as [15]…”

Section: Variation In Gate Capacitance (C G )mentioning

confidence: 99%

“…These variations yield the randomly varied C g i.e. C g (ΔV t , ΔW, ΔL,…) [15]. Thus, the variations in C g , ∆C g can be mathematically defined as [15]…”

Section: Variation In Gate Capacitance (C G )mentioning

confidence: 99%

“…With this mathematical definition and the fact that ΔV t is the most influential in subthreshold MOSFET [18], the following comprehensive analytical expression of ∆C g has been proposed in [15]…”

Section: Variation In Gate Capacitance (C G )mentioning

confidence: 99%

“…Unfortunately, C g , f T , and f max have not been considered even though they also exist and greatly affect the high-frequency performances of such MOSFET-based circuits/systems. Therefore, analytical models of variations in those major high-frequency characteristics have been performed [13][14][15][16][17]. In [13], an analytical model of variation in f T derived as a function of the variation in C g has been proposed where only strong inversion MOSFET has been focused.…”

Section: Introductionmentioning

confidence: 99%

“…According to the aforementioned importance and usage of subthreshold MOSFET in the MOSFET-based VHF circuits/systems, the comprehensive analytical models of variations in C g , f T , and f max of subthreshold MOSFET have been proposed [15][16][17]. Such models have been found to be very accurate as they yield smaller than 10% the average percentages of errors.…”

Section: Introductionmentioning

confidence: 99%

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Comprehensive Analytical Models of Random Variations in Subthreshold MOSFET’s High-Frequency Performances

Banchuin¹

2018

Complementary Metal Oxide Semiconductor

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Subthreshold MOSFET has been adopted in many low power VHF circuits/systems in which their performances are mainly determined by three major high-frequency characteristics of intrinsic subthreshold MOSFET, i.e., gate capacitance, transition frequency, and maximum frequency of oscillation. Unfortunately, the physical level imperfections and variations in manufacturing process of MOSFET cause random variations in MOSFET's electrical characteristics including the aforesaid high-frequency ones which in turn cause the undesired variations in those subthreshold MOSFET-based VHF circuits/systems. As a result, the statistical/variability aware analysis and designing strategies must be adopted for handling these variations where the comprehensive analytical models of variations in those major high-frequency characteristics of subthreshold MOSFET have been found to be beneficial. Therefore, these comprehensive analytical models have been reviewed in this chapter where interesting related issues have also been discussed. Moreover, an improved model of variation in maximum frequency of oscillation has also been proposed.

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“…Here, C g which can be defined as the total capacitance seen by looking in to the gate terminal of the MOSFET as shown in Figure 1, can be given in terms of the gate charge, Q g as [15]…”

Section: Variation In Gate Capacitance (C G )mentioning

confidence: 99%

“…These variations yield the randomly varied C g i.e. C g (ΔV t , ΔW, ΔL,…) [15]. Thus, the variations in C g , ∆C g can be mathematically defined as [15]…”

Section: Variation In Gate Capacitance (C G )mentioning

confidence: 99%