Electronics for space applications
have stringent requirements
on both performance and radiation tolerance. The constant exposure
to cosmic radiation damages and eventually destroys electronics, limiting
the lifespan of all space-bound missions. Thus, as space missions
grow increasingly ambitious in distance away from Earth, and therefore
time in space, the electronics driving them must likewise grow increasingly
radiation-tolerant. In this work, we show how carbon nanotube (CNT)
field-effect transistors (CNFETs), a leading candidate for energy-efficient
electronics, can be strategically engineered to simultaneously realize
a robust radiation-tolerant technology. We demonstrate radiation-tolerant
CNFETs by leveraging both extrinsic CNFET benefits
owing to CNFET device geometries enabled by their low-temperature
fabrication, as well as intrinsic CNFET benefits
owing to CNTs’ inherent material properties. By performing
a comprehensive study and optimization of CNFET device geometries,
we demonstrate record CNFET total ionizing dose (TID) tolerance (above
10 Mrad(Si)) and show transient upset testing on complementary metal-oxide-semiconductor
(CMOS) CNFET-based 6T SRAM memories via X-ray prompt
dose testing (threshold dose rate = 1.3 × 1010 rad(Si)/s).
Taken together, this work demonstrates CNFETs’ potential as
a technology for next-generation space applications.