Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors

Abstract

Abstract. The current of ballistic nanoscale MOSFETs is expected to exhibit shot noise, essentially because the electron distribution is very far from equilibrium. Here, we derive an analytical expression of shot noise in fully ballistic MOSFETs and show how it can be computed on the basis of numerical simulations of the DC electrical properties. We show that the power spectral density of shot noise of the drain current is strongly suppressed as an effect of both Pauli exclusion and electrostatic interaction. The amount of such suppression depends on the device structure, and in particular on the gate capacitance. Results on shot noise of the gate current are also shown, since such the leakage current might be significant in nanoscale MOSFETs, for small equivalent oxide thickness.

Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors

“…From a numerical point of view, a self-consistent solution of the electrostatics and transport equations is mandatory in order to properly consider such effects. An analysis of this kind has been performed for example in double gate MOSFETs [17] and in nanoscale ballistic MOSFETs [18], where a strong shot noise suppression, mostly due to Pauli exclusion principle, has been observed.…”

Noise in graphene and carbon nanotube devices

“…An analytical model of shot noise in nanoscale FETs with two-dimensional channel is reported in [9]. We can follow the same derivation for one-dimensional nFETs (not shown here), including also the possibility of hole injection from the drain.…”

Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime

“…Therefore by means of results in [11], we have that the fluctuations of the peak of the barrier in first subband δ E c is: where N 2D is the density of states of the first subband, f s , f d are the occupation factors at source and drain, respectively, the quantum capacitances C Q+ , C Q− are given by:…”