Analytical breakdown voltage model for a partial SOI-LDMOS transistor with a buried oxide step structure

Abstract

We have developed a simple physics-based two-dimensional analytical Off-state breakdown voltage model of a Partial Buried Oxide Step Structure (PBOSS) Silicon-On-Insulator Lateral Diffused Metal Oxide Semiconductor (SOI-LDMOS) transistor. The analytical model includes the expressions of surface potential and electric field distributions in the drift region by solving the 2D Poisson's equation. The electric field at the Si-SiO2 surface is modified by creating additional electric field peaks due to the presence of the PBOSS structure. The uniformly distributed electric field results in improving the breakdown voltage. Further, the breakdown voltage is analytically obtained via critical electric field concept to quantify the breakdown characteristic. The model exploits the impact of the critical device design parameters such as thickness and length of the PBOSS structure, doping, and thickness of the drift region on the surface electric field and the breakdown voltage. The proposed model is verified by the results obtained from ATLAS two dimensional simulations. The analytical model is of the high potential from a physical and mathematical point of view to design high voltage SOI-LDMOS transistors for power switching applications.

Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network

“…Such a compromise cripples the role of simple but efficient analytical models for exploring and designing lateral power devices. Therefore, in most cases, TCAD tools are still needed, even if the 2D electric field and potential model have already been analytically obtained [ 7 , 8 , 9 , 10 ]. Meanwhile, with advanced lateral power devices possessing more and more complicated 2D structures, the combination of the conventional impact ionization model and finite element analysis in TCAD tools also leads to a significant boost in computation and a much more severe convergence issue.…”