2020
DOI: 10.1109/access.2020.3028317
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Analytical Dead-Band Compensation for ZCS Modulation Applied to Hybrid Si-SiC Dual Active Bridge

Abstract: This paper proposes a triangular modulation with zero current switching (ZCS) for a hybrid Si-SiC isolated bidirectional DC-DC converter (IBDC). Three of the four legs in the IBDC operate at ZCS and use Si IGBTs, while the fourth operates at zero voltage switching (ZVS) and uses SiC MOSFET. In that case, the turn-off switching losses are concentrated regardless of the direction of the power. The main contribution of this paper resides in the proposed dead-band compensation mechanism. This deadband compensation… Show more

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Cited by 3 publications
(3 citation statements)
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“…The two-level dual-active bridge is a bidirectional and controllable DC-DC converter with substantial power capabilities [17]. Figure 1 shows the structure of DAB with eight semiconductor devices, a high-frequency transformer, an energy transfer inductor, and DC-link capacitors where the converter resembles a more common full bridge with a controllable rectifier.…”
Section: Dual-active-bridge Topology and Its Modulationsmentioning
confidence: 99%
“…The two-level dual-active bridge is a bidirectional and controllable DC-DC converter with substantial power capabilities [17]. Figure 1 shows the structure of DAB with eight semiconductor devices, a high-frequency transformer, an energy transfer inductor, and DC-link capacitors where the converter resembles a more common full bridge with a controllable rectifier.…”
Section: Dual-active-bridge Topology and Its Modulationsmentioning
confidence: 99%
“…In this direction, obtaining soft-switching conditions in the full operating region is highly desirable for high-efficiency results. Zero turn-on losses can be guaranteed, as it was explained in Chapter 2.6, but the same is not valid for turn-off losses [128]. Achieving Zero Voltage Switching (ZVS) does not ensure operating the converter with low losses since both the conduction and turn-off losses can be very high and must therefore be minimized.…”
Section: Introductionmentioning
confidence: 99%
“…The gate turn-on signal is applied after the anti-parallel diode conducts, and as a consequence, low switching losses are generated. Nevertheless, the voltage drainsource non-linear dependency of the parasitic capacitance hinders ZVS during turn-off [128]. As a consequence, turn-off switching losses are generated [117][118][119].…”
Section: Introductionmentioning
confidence: 99%