Analytical Formulas for Mean Gain and Excess Noise Factor in InAs Avalanche Photodiodes

Jamil, Erum; Hayat, Majeed M.; Keeler, Gordon Arthur

doi:10.1109/ted.2017.2786080

Cited by 1 publication

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“…This asymptotic result is valid when w d. Validation of these formulae for estimating gain and excess noise was recently performed by Jamil et al, who were able to accurately predict these characteristics in InAs APDs with avalanche widths as low as 500 nm [7].…”

Section: B Modification Of the Model For Optical Receivers Based On mentioning

confidence: 78%

Sensitivity Calculations of High-Speed Optical Receivers Based on Electron-APDs

Shulyak

Hayat

2020

J. Lightwave Technol.

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Sensitivity of high-speed optical receivers is heavily influenced by the performance of the optical detectors used in the receivers, the data rate, and the target bit-error-rate (BER). A simulation model for sensitivity of optical receivers based on electron-avalanche photodiodes (e-APDs) is presented. It allows for the optimization of avalanche width and operating voltage to achieve the optimum receiver sensitivity for given bit rate and target BER. The effects modelled include inter-symbol interference (ISI), various dark current components (tunnelling, diffusion, and generation), current impulse duration, avalanche gain, and amplifier's noise. The model was demonstrated through simulations of Indium Arsenide (InAs) e-APDs. For 10 −12 target BER, the receiver's sensitivities were found to be −30.6, −22.7, −19.2, and −16.6 dBm, for 10, 25, 40, and 50 Gb/s data rate, respectively. Desirable avalanche properties of InAs e-APDs are counteracted by detrimental effects of high dark currents. Hence InAs e-APDs with lower dark currents are required to be more competitive with other optical detector technologies for high-speed optical receivers. The data reported in this article is available from the ORDA digital repository (

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Section: B Modification Of the Model For Optical Receivers Based On mentioning

confidence: 78%